First-principles theoretical study on dry reforming of methane over perfect and boron-vacancy-containing h-BN sheet-supported Ni catalysts.

The entire reaction mechanism of the dry reforming of methane (DRM) as well as the competition processes over perfect and boron-vacancy-containing h-BN sheet-supported Ni-catalysts (labeled Ni2/h-BN and Ni2/h-BN-B-D) was studied by density functional theory calculations in the present work. Our calculation results show that B-defected h-BN strongly binds to the Ni2 active sites (i.e., shows a strong metal-support interaction (SMSI) character) due to the better electron transfer between Ni2 sites and the support. It was found that CH4 is easier to activate than molecular CO2. The activation of CO2 occurs on the surface of Ni2/h-BN through a direct route, whereas it is prone to follow a hydrogen-assisted path for Ni2/h-BN-B-D via the COOH* intermediate, and the results show that the oxidant O* is easily formed on the surface of Ni2/h-BN-B-D. It was also found that O* is the main oxidant agent for CHx* intermediates through the CH3-O oxidation mechanism. The reaction kinetic analysis indicated that the reverse water gas shift reaction (RWGS) is much more favorable than DRM (1.30 vs. 1.72 eV) over the Ni2/h-BN system, whereas the RWGS and DRM are comparable on Ni2/h-BN-B-D (1.77 vs. 1.66 eV), suggesting a high DRM activity on Ni2/h-BN-B-D. Moreover, neither methane cracking nor a Boudouard reaction to form C* species is thermodynamically and kinetically unfavorable over Ni2/h-BN-B-D; hence, Ni2/h-BN-B-D has strong resistance to carbon deposition. Compared to Ni(111), both Ni2/h-BN-B-D and Ni2/h-BN show strong resistance to carbon deposition. Our results provide a further mechanistic understanding of the DRM over an Ni-based catalyst through the SMSI characteristic and the SMSI favors strong resistance to carbon deposition.