Zhao Yifan, Zhao Shishun, Wang Lei, Wang Shiping, Du Yujing, Zhao Yanan, Jin Shengye, Min Tai, Tian Bian, Jiang Zhuangde, Zhou Ziyao, Liu Ming
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, and State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China.
Nanoscale. 2021 Jan 7;13(1):272-279. doi: 10.1039/d0nr07911a. Epub 2020 Dec 17.
Obtaining small, fast, and energy-efficient spintronic devices requires a new way of manipulating spin states in an effective manner. Here, a prototype photovoltaic spintronic device with a p-n junction Si wafer is proposed which generates photo-induced electrons and changes the ferromagnetism by interfacial charge doping. A ferromagnetic resonance field change of 48.965 mT and 11.306 mT is achieved in Co and CoFeB thin films under sunlight illumination, respectively. The transient reflection (TR) analysis and the first principles calculation reveal the photovoltaic electrons that are doped into the magnetic layer and alter its Fermi level, correspondingly. This finding provides a new method of magnetism modulation and demonstrates a solar-driven spintronic device with abundant energy supply, which may further expand the landscape of spintronics research.
要获得小型、快速且节能的自旋电子器件，需要一种以有效方式操纵自旋态的新方法。在此，提出了一种具有p-n结硅晶片的光伏自旋电子器件原型，该器件可产生光致电子并通过界面电荷掺杂改变铁磁性。在阳光照射下，Co和CoFeB薄膜中的铁磁共振场分别变化了48.965 mT和11.306 mT。瞬态反射（TR）分析和第一性原理计算表明，光生伏特电子被掺杂到磁性层中并相应地改变其费米能级。这一发现提供了一种磁性调制的新方法，并展示了一种具有丰富能量供应的太阳能驱动自旋电子器件，这可能会进一步拓展自旋电子学研究的领域。
