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通过引入用于电子捕获的ZnO层增强界面磁的阳光控制。

Enhancing Sunlight Control of Interfacial Magnetism by Introducing the ZnO Layer for Electron Harvesting.

作者信息

Zhao Yifan, Zhao Meng, Tian Bian, Jiang Zhuangde, Wang Yuheng, Liu Ming, Zhou Ziyao

机构信息

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, and State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China.

State Key Laboratory for Manufacturing Systems Engineering, Collaborative Innovation Center of High-End Manufacturing Equipment, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China.

出版信息

ACS Appl Mater Interfaces. 2021 Jan 13;13(1):2018-2024. doi: 10.1021/acsami.0c19367. Epub 2020 Dec 22.

Abstract

Recently, researchers have developed photovoltaic (PV) control of magnetism to provide a new way of manipulating spin states in an energy-effective manner, where the capability of magnetism manipulation is crucial. Here, we established a PV heterostructure of Pt/PV/ZnO/Co/Si to realize sunlight control of magnetism, where the ZnO layer is introduced to enhance the electron transportation as well as the interfacial optical-electromagnetic tunability. Compared to the PV heterostructure without the ZnO layer (245 Oe), a much greater ferromagnetic resonance shift (1149 Oe) and a saturated magnetization reduction (12.7%) were obtained with the optimal ZnO inserting layer under sunlight illumination. These results prove that the ZnO layer plays a key role in optimizing magnetic manipulation and opening a door toward PV spintronics in the future.

摘要

最近,研究人员开发了磁性的光伏(PV)控制,以提供一种以节能方式操纵自旋态的新方法,其中磁性操纵能力至关重要。在此,我们建立了Pt/PV/ZnO/Co/Si的PV异质结构以实现磁性的阳光控制,其中引入ZnO层以增强电子传输以及界面光电磁可调性。与没有ZnO层的PV异质结构(245 Oe)相比,在阳光照射下,使用最佳ZnO插入层可获得更大的铁磁共振位移(1149 Oe)和饱和磁化强度降低(12.7%)。这些结果证明,ZnO层在优化磁性操纵以及为未来的PV自旋电子学打开一扇门方面起着关键作用。

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