Zhao Yifan, Zhao Meng, Tian Bian, Jiang Zhuangde, Wang Yuheng, Liu Ming, Zhou Ziyao
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, and State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China.
State Key Laboratory for Manufacturing Systems Engineering, Collaborative Innovation Center of High-End Manufacturing Equipment, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China.
ACS Appl Mater Interfaces. 2021 Jan 13;13(1):2018-2024. doi: 10.1021/acsami.0c19367. Epub 2020 Dec 22.
Recently, researchers have developed photovoltaic (PV) control of magnetism to provide a new way of manipulating spin states in an energy-effective manner, where the capability of magnetism manipulation is crucial. Here, we established a PV heterostructure of Pt/PV/ZnO/Co/Si to realize sunlight control of magnetism, where the ZnO layer is introduced to enhance the electron transportation as well as the interfacial optical-electromagnetic tunability. Compared to the PV heterostructure without the ZnO layer (245 Oe), a much greater ferromagnetic resonance shift (1149 Oe) and a saturated magnetization reduction (12.7%) were obtained with the optimal ZnO inserting layer under sunlight illumination. These results prove that the ZnO layer plays a key role in optimizing magnetic manipulation and opening a door toward PV spintronics in the future.
最近,研究人员开发了磁性的光伏(PV)控制,以提供一种以节能方式操纵自旋态的新方法,其中磁性操纵能力至关重要。在此,我们建立了Pt/PV/ZnO/Co/Si的PV异质结构以实现磁性的阳光控制,其中引入ZnO层以增强电子传输以及界面光电磁可调性。与没有ZnO层的PV异质结构(245 Oe)相比,在阳光照射下,使用最佳ZnO插入层可获得更大的铁磁共振位移(1149 Oe)和饱和磁化强度降低(12.7%)。这些结果证明,ZnO层在优化磁性操纵以及为未来的PV自旋电子学打开一扇门方面起着关键作用。