Dutta B, Majidi D, Talarico N W, Lo Gullo N, Courtois H, Winkelmann C B
Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 Avenue des Martyrs, 38042 Grenoble, France.
QTF Centre of Excellence, Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, 20014 Turku, Finland.
Phys Rev Lett. 2020 Dec 4;125(23):237701. doi: 10.1103/PhysRevLett.125.237701.
We demonstrate gate control of electronic heat flow in a thermally biased single-quantum-dot junction. Electron temperature maps taken in the immediate vicinity of the junction, as a function of the gate and bias voltages applied to the device, reveal clearly defined Coulomb diamond patterns that indicate a maximum heat transfer at the charge degeneracy point. The nontrivial bias and gate dependence of this heat valve results from the quantum nature of the dot at the heart of device and its strong coupling to leads.
我们展示了在热偏置单量子点结中电子热流的栅极控制。在结的紧邻区域获取的电子温度图，作为施加到器件上的栅极电压和偏置电压的函数，揭示了清晰定义的库仑菱形图案，这些图案表明在电荷简并点处有最大的热传递。这种热阀的非平凡偏置和栅极依赖性源于器件核心处量子点的量子性质及其与引线的强耦合。
