Liu Yu-Hua, Peng Hang, Liao Wei-Qiang
College of Chemistry, Nanchang University, Nanchang 330031, People's Republic of China.
Chem Commun (Camb). 2021 Jan 21;57(5):647-650. doi: 10.1039/d0cc07443h.
Organic-inorganic metal halide ferroelectric semiconductors are mainly lead halide ones, suffering from the presence of toxic lead. Herein, we report a lead-free bismuth iodide ferroelectric semiconductor [1,4-butanediammonium]BiI5, showing a high Curie temperature of 365 K and a small band gap of 1.95 eV, smaller than those of most lead halide counterparts.
有机-无机金属卤化物铁电半导体主要是卤化铅类，存在有毒铅的问题。在此，我们报道了一种无铅碘化铋铁电半导体[1,4-丁二铵]BiI5，其居里温度高达365 K，带隙为1.95 eV，比大多数卤化铅同类物的带隙小。
