Zhankui Wang, Minghua Pang, Mingchao Liang, Jianguo Yao, Lijie Ma, Jianxiu Su
Henan Institute of Science and Technology, Xinxiang, China.
Henan university of Science and Technology, Luoyang, China.
Sci Prog. 2020 Oct-Dec;103(4):36850420982451. doi: 10.1177/0036850420982451.
In this paper, a series of experiments were carried out to explore the effect of slurry pH on materials removal rate (MRR) and surface quality in lapping of SiN ceramics wafers with fixed abrasive pad (FAP) using different slurries with different pH. Then, the scanning electron microscope was employed to detect the microtopography and abrade smooth of FAP for exploring the effect of slurries pH on self-conditioning of pad. Experimental results demonstrated that the roughness of wafers increase with the increasing of slurry pH value. The surface of wafers is the best when the pH = 1 and the worst When the pH = 13. The MRR decreases firstly and then decreases with the increasing of the pH. The MRR reaches the lowest when slurry pH = 7, and reaches the highest when slurry pH = 13. These results further suggest that the soften layer of SiO could be formed due to the reactions between water and materials on wafer surface, which facilitates increasing material remove rate and improving the surface quality. The hydrogen ion and triethanolamine in slurry could react with the copper in fixed abrasive pad, which also could enhance the materials remove rate and affect the surface quality.
本文开展了一系列实验，以探究在使用不同pH值的不同浆料对氮化硅陶瓷晶片进行固定磨料抛光时，浆料pH值对材料去除率（MRR）和表面质量的影响。然后，使用扫描电子显微镜检测固定磨料抛光垫的微观形貌和磨损平整度，以探究浆料pH值对抛光垫自修整的影响。实验结果表明，晶片的粗糙度随浆料pH值的增加而增大。当pH = 1时，晶片表面状况最佳；当pH = 13时，晶片表面状况最差。随着pH值的增加，材料去除率先降低后升高。当浆料pH = 7时，材料去除率达到最低；当浆料pH = 13时，材料去除率达到最高。这些结果进一步表明，水与晶片表面材料之间的反应可能会形成二氧化硅软化层，这有助于提高材料去除率并改善表面质量。浆料中的氢离子和三乙醇胺可能会与固定磨料抛光垫中的铜发生反应，这也会提高材料去除率并影响表面质量。
