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用于高效芯片-光纤对接耦合的硅基上硅传输波导和SOI锥形结构的导内模式转换。

Intraguide mode conversions of silica-on-silicon transfer waveguides and SOI tapered structures for highly efficient chip-fiber butt coupling.

作者信息

Yu Ting, Sun DeGui, Chen Zhuo, Li Tiancheng

出版信息

Appl Opt. 2020 Dec 20;59(36):11253-11260. doi: 10.1364/AO.402403.

Abstract

An advanced fiber-waveguide coupling scheme is crucial to the effective developments and applications of silicon-on-insulator (SOI) waveguide photonic integrated chips. In this paper, a regime of the mode conversions within guided channels is investigated to realize a highly efficient fiber-chip coupling with a silica-on-silicon (SOS) transfer waveguide that can be realized with the local oxidation of silicon (LOCOS) technique. With this regime, the optical-field overlap process of two optical guided modes between the fiber and the SOI waveguide through a gap is simplified to the two loss contributions: (i) the ultralow coupling loss of the fiber-SOS transfer waveguide and (ii) the Fresnel loss of the SOS transfer waveguide and an SOI tapered structure. As a result, all the mode conversions in this system are operated within the guided channels, so it is referred to as an intraguide mode conversion. Further, the overall mode conversion efficiency of such a fiber-SOS-SOI system is modeled, in which the three key processes, the fiber-SOS gap mode conversion, the SOS-SOI interface mode conversion, and the SOI taper profile mode conversion, are individually investigated and optimized. The simulation values and the experimental results are agreeable with each other for both fiber-SOS waveguide coupling loss and fiber-SOI waveguide coupling loss. Consequently, a fiber-chip butt-coupling loss of 0.8-1.0 dB/facet is demonstrated. Finally, the conditions for realizing the effective LOCOS structure and process are discussed.

摘要

一种先进的光纤 - 波导耦合方案对于绝缘体上硅(SOI)波导光子集成芯片的有效开发和应用至关重要。本文研究了导波通道内的模式转换机制,以实现与硅基二氧化硅(SOS)传输波导的高效光纤 - 芯片耦合,该传输波导可通过硅的局部氧化(LOCOS)技术实现。利用这种机制,光纤和SOI波导之间通过间隙的两个光导模的光场重叠过程被简化为两个损耗贡献:(i)光纤 - SOS传输波导的超低耦合损耗,以及(ii)SOS传输波导和SOI锥形结构的菲涅尔损耗。结果,该系统中的所有模式转换都在导波通道内进行,因此被称为导波内模式转换。此外,对这种光纤 - SOS - SOI系统的整体模式转换效率进行了建模,其中分别研究并优化了三个关键过程,即光纤 - SOS间隙模式转换、SOS - SOI界面模式转换和SOI锥形轮廓模式转换。对于光纤 - SOS波导耦合损耗和光纤 - SOI波导耦合损耗,模拟值与实验结果相互吻合。因此,展示了0.8 - 1.0 dB/面的光纤 - 芯片对接耦合损耗。最后讨论了实现有效LOCOS结构和工艺的条件。

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