Papes Martin, Cheben Pavel, Benedikovic Daniel, Schmid Jens H, Pond James, Halir Robert, Ortega-Moñux Alejandro, Wangüemert-Pérez Gonzalo, Ye Winnie N, Xu Dan-Xia, Janz Siegfried, Dado Milan, Vašinek Vladimír
Opt Express. 2016 Mar 7;24(5):5026-5038. doi: 10.1364/OE.24.005026.
Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO upper cladding thin high-index SiN layers. The SiN layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.
光纤芯片边缘耦合器在集成光学中被广泛用于平面波导电路与光纤之间的光耦合。在这项工作中,我们报道了一种用于硅光子线波导的具有大模尺寸的新型光纤芯片边缘耦合器概念。该耦合器允许与具有大模尺寸的传统切割光纤直接耦合,同时无需使用透镜光纤。该耦合器是为220纳米绝缘体上硅(SOI)平台设计的。经三维时域有限差分(FDTD)和全矢量三维本征模展开(EME)计算独立确认,其整体耦合效率超过90%。我们展示了两种具体的耦合器设计,即用于模场直径(MFD)为6微米的高数值孔径单模光纤以及MFD为10.4微米的标准SMF - 28光纤。我们的耦合器概念的一个重要优势是能够在芯片边缘扩展模式,而不会因掩埋氧化物(BOX)导致高的衬底泄漏损耗,在我们的设计中BOX设定为3微米。通过在SiO上包层中实现薄的高折射率SiN层来实现这一显著特性。SiN层增加了刻面附近上包层的有效折射率。通过亚波长折射率工程沿着锥形控制折射率,以便于向硅线波导进行绝热模式转换,同时硅线波导沿着耦合器反向锥形。使用全矢量模式求解器在芯片刻面处进行模式重叠优化。使用三维FDTD模拟和全矢量三维EME计算研究沿着耦合器的模式转换。这些耦合器针对横向电(TE)偏振操作进行了优化,工作波长以1.55微米为中心。