Yang Xiaoyu, Luo Deying, Xiang Yuren, Zhao Lichen, Anaya Miguel, Shen Yonglong, Wu Jiang, Yang Wenqiang, Chiang Yu-Hsien, Tu Yongguang, Su Rui, Hu Qin, Yu Hongyu, Shao Guosheng, Huang Wei, Russell Thomas P, Gong Qihuang, Stranks Samuel D, Zhang Wei, Zhu Rui
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics, and Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China.
School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
Adv Mater. 2021 Feb;33(7):e2006435. doi: 10.1002/adma.202006435. Epub 2021 Jan 4.
Understanding the fundamental properties of buried interfaces in perovskite photovoltaics is of paramount importance to the enhancement of device efficiency and stability. Nevertheless, accessing buried interfaces poses a sizeable challenge because of their non-exposed feature. Herein, the mystery of the buried interface in full device stacks is deciphered by combining advanced in situ spectroscopy techniques with a facile lift-off strategy. By establishing the microstructure-property relations, the basic losses at the contact interfaces are systematically presented, and it is found that the buried interface losses induced by both the sub-microscale extended imperfections and lead-halide inhomogeneities are major roadblocks toward improvement of device performance. The losses can be considerably mitigated by the use of a passivation-molecule-assisted microstructural reconstruction, which unlocks the full potential for improving device performance. The findings open a new avenue to understanding performance losses and thus the design of new passivation strategies to remove imperfections at the top surfaces and buried interfaces of perovskite photovoltaics, resulting in substantial enhancement in device performance.
了解钙钛矿光伏中掩埋界面的基本特性对于提高器件效率和稳定性至关重要。然而，由于掩埋界面不暴露的特性，研究它们面临着巨大的挑战。在此，通过将先进的原位光谱技术与简便的剥离策略相结合，破解了全器件堆栈中掩埋界面的奥秘。通过建立微观结构与性能的关系，系统地揭示了接触界面处的基本损耗，并且发现由亚微观尺度的扩展缺陷和铅卤化物不均匀性引起的掩埋界面损耗是提高器件性能的主要障碍。通过使用钝化分子辅助的微观结构重建，可以显著减轻这些损耗，从而释放出提高器件性能的全部潜力。这些发现为理解性能损耗开辟了一条新途径，进而为设计新的钝化策略以消除钙钛矿光伏器件顶表面和掩埋界面处的缺陷提供了思路，从而大幅提高器件性能。
