Deng Shuping, Jiang Xianyan, Chen Lili, Qi Ning, Tang Xinfeng, Chen Zhiquan
School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University, Wuhan 430072, China.
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
ACS Appl Mater Interfaces. 2021 Jan 13;13(1):868-877. doi: 10.1021/acsami.0c17836. Epub 2021 Jan 4.
In this paper, we report a series of polycrystalline AgCuTeSe samples with high thermoelectric performance. X-ray photoelectron spectroscopy data suggest the observation of Ag, Cu, Te, and Se states of Ag, Cu, Te, and Se. Meanwhile, the carrier concentration of the obtained p-type samples changes from 9.12 × 10 to 0.86 × 10 cm as their carrier mobility varies from 698.55 to 410.12 cm·V·s at 300 K. Compared with undoped AgCuTe, an ultralow thermal conductivity is realized in AgCuTeSe due to the enhanced phonon scattering. Ultimately, a maximum figure of merit (ZT) of ∼1.45 at 573 K and a high average ZT above 1.0 at temperatures ranging from room temperature to 773 K can be achieved in AgCuTeSe, which increases by 186% compared to that of the undoped AgCuTe (0.82 at 573 K). This work provides a viable insight toward understanding the effect of the Se atom on the lattice structure and thermoelectric properties of AgCuTe and other transition-metal dichalcogenides.
在本文中，我们报道了一系列具有高热电性能的多晶AgCuTeSe样品。X射线光电子能谱数据表明观察到了Ag、Cu、Te和Se的Ag、Cu、Te和Se态。同时，在300 K时，随着所获得的p型样品的载流子迁移率从698.55变化到410.12 cm²·V⁻¹·s⁻¹，其载流子浓度从9.12×10¹⁹变化到0.86×10²⁰ cm⁻³。与未掺杂的AgCuTe相比，由于声子散射增强，AgCuTeSe实现了超低的热导率。最终，AgCuTeSe在573 K时可实现约1.45的最大优值（ZT），在室温至773 K的温度范围内平均ZT高于1.0，与未掺杂的AgCuTe（573 K时为0.82）相比提高了186%。这项工作为理解Se原子对AgCuTe和其他过渡金属二硫属化物的晶格结构和热电性能的影响提供了可行的见解。
