Ma Zheng, Xu Tian, Li Wang, Cheng Yiming, Li Jinmeng, Wei Yingchao, Jiang Qinghui, Luo Yubo, Yang Junyou
State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
ACS Appl Mater Interfaces. 2022 Feb 23;14(7):9192-9202. doi: 10.1021/acsami.1c24075. Epub 2022 Feb 8.
A nanostructure has a significant role in enhancing the power factor and preventing the heat propagation for thermoelectric materials. Herein, we propose a unique segregated and percolated (SP) microphase-separated structure to enhance the thermoelectric performance of SnTe. The SP structure is composed of insoluble SnTe and AgCuTe, in which AgCuTe with ultralow lattice thermal conductivity undergoes a solid-phase welding during a spark plasma sintering process and forms continuous percolated layers at the interface of isolated SnTe. The SP structure achieved a simultaneous scattering for low energy holes due to the energy offset of the valence band maximum between SnTe and AgCuTe and for phonons due to the noncoherent interfaces between SnTe and AgCuTe, resulting in a high Seebeck coefficient of ∼219.4 μV/K and a low lattice thermal conductivity of ∼1.1 W m K at 800 K for (SnTe)(AgCuTe). The thermoelectric performance was further enhanced by means of the cosubstitution of In and Mn for Sn in the SnTe lattice, inducing resonance levels and extra phonon scattering. As a result, the SP structure combined with In/Mn codoping enable us to achieve a low lattice thermal conductivity of 0.47 W m K, a peak of ∼1.45 at 800 K, and a high average of ∼0.73 (400-800 K) for (SnInMnTe)(AgCuTe).
纳米结构在提高热电材料的功率因数和防止热传播方面具有重要作用。在此,我们提出一种独特的分离和渗透(SP)微相分离结构,以提高SnTe的热电性能。SP结构由不溶性的SnTe和AgCuTe组成,其中具有超低晶格热导率的AgCuTe在放电等离子烧结过程中发生固相焊接,并在孤立的SnTe界面处形成连续的渗透层。由于SnTe和AgCuTe之间价带最大值的能量偏移,SP结构实现了对低能空穴的同时散射,并且由于SnTe和AgCuTe之间的非相干界面实现了对声子的散射,使得(SnTe)(AgCuTe)在800 K时具有约219.4 μV/K的高塞贝克系数和约1.1 W m K的低晶格热导率。通过在SnTe晶格中用In和Mn共取代Sn,进一步增强了热电性能,诱导了共振能级和额外的声子散射。结果,SP结构与In/Mn共掺杂相结合,使我们能够实现(SnInMnTe)(AgCuTe)在800 K时0.47 W m K的低晶格热导率、约1.45的峰值和约0.73(400 - 800 K)的高平均品质因数。