对用于生物分子传感的硅纳米线场效应晶体管阻抗测量读出的全面理解

Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing.

作者信息

Bhattacharjee Abhiroop, Nguyen Thanh Chien, Pachauri Vivek, Ingebrandt Sven, Vu Xuan Thang

机构信息

Institute of Materials in Electrical Engineering 1, RWTH Aachen University, Sommerfeldstraße 24, 52074 Aachen, Germany.

Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani (BITS Pilani), Pilani 333031, India.

出版信息

Micromachines (Basel). 2020 Dec 31;12(1):39. doi: 10.3390/mi12010039.

DOI:10.3390/mi12010039

PMID:33396324

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7823685/

Abstract

Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem of the classical potentiometric readout. We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE) for SiNW-FETs to perform impedimetric measurements through SPICE simulations and quantitatively evaluate influences of various device parameters to the transfer function of the devices. Furthermore, we investigated how biomolecule binding to the surface of SiNW-FETs is influencing the impedance spectra. Based on mathematical analysis and simulation results, we proposed methods that could improve the impedimetric readout of SiNW-FET biosensors and make it more explicable.

摘要

利用硅纳米线场效应晶体管（SiNW-FET）进行阻抗传感在生物分子无标记检测方面显示出巨大潜力。通过这种技术，有可能克服德拜屏蔽限制，这是传统电位读出的一个主要问题。我们在具有集成电路重点的模拟程序（SPICE）中采用电子电路模型对SiNW-FET进行阻抗测量，通过SPICE模拟定量评估各种器件参数对器件传递函数的影响。此外，我们研究了生物分子与SiNW-FET表面的结合如何影响阻抗谱。基于数学分析和模拟结果，我们提出了可以改进SiNW-FET生物传感器阻抗读出并使其更具解释性的方法。