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自钝化导致黑磷烯的半导体边缘。

Self-passivation leads to semiconducting edges of black phosphorene.

作者信息

Ding Li Ping, Ding Feng

机构信息

Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea.

出版信息

Nanoscale Horiz. 2021 Feb 1;6(2):148-155. doi: 10.1039/d0nh00506a. Epub 2021 Jan 5.

Abstract

The edges of black phosphorene (BP) have been extensively explored. The previous experimental observations that all the BP edges are semiconducting implies that the as-cut edges of BP tend to be reconstructed. Here we present a global structural search of three typical BP edges, namely armchair, zigzag and zigzag-1 edges. It is found that all the three pristine edges are metastable, and all of them can be quickly self-passivated by (i) forming P[double bond, length as m-dash]P double bonds (one σ and one π bond), (ii) reconstructing new polygonal rings will all P atoms bonded with three sp bonds or (iii) forming a special P(2)-P(4) configuration with a two-coordinated P atom accommodating two lone pair electrons and one four-coordinated P atom without lone pair electrons. Highly different from the pristine edges, all these highly stable reconstructed edges are semiconducting. This study showed that the reconstruction of the edges of a 2D material, just like the surfaces of a 3D crystal, must be considered for both fundamental studies and practical applications. Besides BP, this study also sheds light on the structures and properties of the edges of many other 2D materials.

摘要

黑磷烯(BP)的边缘已得到广泛研究。先前的实验观察结果表明,所有BP边缘均为半导体,这意味着BP的切割边缘倾向于重构。在此,我们对三种典型的BP边缘进行了全局结构搜索,即扶手椅型、锯齿型和锯齿-1型边缘。结果发现,所有这三种原始边缘都是亚稳态的,并且它们都可以通过以下方式快速自钝化:(i)形成P[双键,长度为m破折号]P双键(一个σ键和一个π键);(ii)重构新的多边形环,使所有P原子都与三个sp键相连;或(iii)形成一种特殊的P(2)-P(4)构型,其中一个两配位的P原子容纳两个孤对电子,另一个四配位的P原子没有孤对电子。与原始边缘截然不同的是,所有这些高度稳定的重构边缘都是半导体。这项研究表明,对于二维材料边缘的重构,如同三维晶体的表面一样,在基础研究和实际应用中都必须予以考虑。除了BP之外,这项研究还为许多其他二维材料边缘的结构和性质提供了启示。

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