Ding Li-Ping, Guo Zi Ao, Qiao Fei-Yue, Guo Yi-Jin, Shao Peng, Ding Feng
Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China.
Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, People's Republic of China.
J Phys Chem Lett. 2024 Feb 22;15(7):1999-2005. doi: 10.1021/acs.jpclett.4c00358. Epub 2024 Feb 13.
Recent advancements in preparing few-layer black phosphorene (BP) are hindered by edge reconstruction challenges. Our previous studies have revealed the factors contributing to the difficulty of growing few-layer BP. In this study, we have successfully identified three reconstructed edges in bi- and multilayer BP through a combination of the crystal structure analysis by particle swarm optimization (CALYPSO) global structure search and density functional theory (DFT). Notably, the reconstruction between adjacent layers proves more beneficial than self-passivation or maintaining pristine edges. Among the reconstructed edges, the reconstructed ZZ edge is the most stable, regardless of the number of layers. Calculated electronic band structures reveal a significant transition in the electronic properties of black phosphorus nanoribbons (BPNRs), changing from metallic to semiconducting. This insight not only enhances the understanding of the fundamental properties of BP but also provides valuable theoretical guidance for the experimental growth of BPNRs or black phosphorus nanowires (BPNWs).
制备少层黑磷烯(BP)的最新进展受到边缘重构挑战的阻碍。我们之前的研究揭示了导致少层BP生长困难的因素。在本研究中,我们通过结合粒子群优化晶体结构分析(CALYPSO)全局结构搜索和密度泛函理论(DFT),成功识别出了双层和多层BP中的三种重构边缘。值得注意的是,相邻层之间的重构比自钝化或保持原始边缘更有益。在重构边缘中,无论层数多少,重构的ZZ边缘最稳定。计算得到的电子能带结构揭示了黑磷纳米带(BPNR)电子性质的显著转变,从金属性转变为半导体性。这一见解不仅加深了对BP基本性质的理解,也为BPNR或黑磷纳米线(BPNW)的实验生长提供了有价值的理论指导。