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用于下一代显示器的量子点发光二极管的技术进展。

Technology progress on quantum dot light-emitting diodes for next-generation displays.

作者信息

Bang Sang Yun, Suh Yo-Han, Fan Xiang-Bing, Shin Dong-Wook, Lee Sanghyo, Choi Hyung Woo, Lee Tae Hoon, Yang Jiajie, Zhan Shijie, Harden-Chaters William, Samarakoon Chatura, Occhipinti Luigi G, Han Soo Deok, Jung Sung-Min, Kim Jong Min

机构信息

Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK.

出版信息

Nanoscale Horiz. 2021 Feb 1;6(2):68-77. doi: 10.1039/d0nh00556h. Epub 2021 Jan 5.

Abstract

Quantum dot light-emitting diodes (QD-LEDs) are widely recognised as great alternatives to organic light-emitting diodes (OLEDs) due to their enhanced performances. This focus article surveys the current progress on the state-of-the-art QD-LED technology including material synthesis, device optimization and innovative fabrication processes. A discussion on the material synthesis of core nanocrystals, shell layers and surface-binding ligands is presented for high photoluminescence quantum yield (PLQY) quantum dots (QDs) using heavy-metal free materials. The operational principles of several types of QD-LED device architectures are also covered, and the recent evolution of device engineering technologies is investigated. By exploring the fabrication process for pixel-patterning of QD-LEDs on an active-matrix backplane for full-colour display applications, we anticipate further improvement in device performance for the commercialisation of next-generation displays.

摘要

量子点发光二极管(QD-LED)因其性能的提升而被广泛认为是有机发光二极管(OLED)的绝佳替代品。这篇重点文章综述了最先进的QD-LED技术的当前进展,包括材料合成、器件优化和创新制造工艺。讨论了使用无重金属材料合成具有高光致发光量子产率(PLQY)的量子点(QD)的核心纳米晶体、壳层和表面结合配体。还涵盖了几种类型的QD-LED器件结构的工作原理,并研究了器件工程技术的最新进展。通过探索在有源矩阵背板上对QD-LED进行像素图案化的制造工艺以用于全彩显示应用,我们预计下一代显示器商业化的器件性能将得到进一步提升。

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