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High-Performance Phototransistors Based on MnPSe and Its Hybrid Structures with Au Nanoparticles.

作者信息

Han Xu, Song Pengbo, Xing Jie, Chen Zhong, Li Danyang, Xu Guangyuan, Zhao Xiaojun, Ma Fangyuan, Rong Dongke, Shi Youguo, Islam Md Rasidul, Liu Kong, Huang Yuan

机构信息

School of Science, China University of Geosciences, Beijing 100083, China.

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

出版信息

ACS Appl Mater Interfaces. 2021 Jan 20;13(2):2836-2844. doi: 10.1021/acsami.0c19530. Epub 2021 Jan 10.

DOI:10.1021/acsami.0c19530
PMID:33426871
Abstract

Layered metal thiophosphates with a general formula MPX (M is a group VIIB or VIII element and X is a chalcogen) have emerged as a novel member in a two-dimensional (2D) family with fascinating physical and chemical properties. Herein, the photoelectric performance of the few-layer MnPSe was studied for the first time. The multilayer MnPSe shows p-type conductivity and its field-effect transistor delivers an ultralow dark current of about 0.1 pA. The photoswitching ratio reaches ∼10 at a wavelength of 375 nm, superior to that of other thiophosphates. A responsivity and detectivity of 392.78 mA/W and 2.19 × 10 Jones, respectively, have been demonstrated under irradiation of 375 nm laser with a power intensity of 0.1 mW/cm. In particular, the photocurrent can be remarkably increased up to 30 times by integrating a layer of Au nanoparticle array at the bottom of the MnPSe layer. The metal-semiconductor interfacial electric field and the strain-induced flexoelectric polarization field caused by the underlying nanorugged Au nanoparticles are proposed to contribute together to the significant current improvement.

摘要

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