Han Xu, Xing Jie, Xu Hong, Huang Yuan, Li Danyang, Lu Jinghao, Li Penghui, Wu Yibing
School of Science, China University of Geosciences, Beijing 100083, People's Republic of China. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
Nanotechnology. 2020 May 22;31(21):215201. doi: 10.1088/1361-6528/ab72bf. Epub 2020 Feb 4.
The development of photoelectric devices for high integration and miniaturization in the semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS nanosheets have an evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by their atomic-layer thickness. Here, we report a convenient and simple method to dramatically enhance the electrical and photoelectric performance of the SnS flake. By integrating SnS with Au plasmonic nanostructures, the photocurrent (I ) increased by over 20 times. The corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by ∼2200%, 2200% and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS field-effect transistor (FET) at 532 nm are 1125.9 A W and 2.12 × 10 Jones. Though atomically thin, the hybrid SnS photodetector, benefiting from local surface plasmonic resonance, achieves an excellent photoelectric performance that is not usually possible with a pristine SnS-only device.
二维层状金属二硫属化物（2D-LMDs）蓬勃发展的研究能够推动半导体行业中用于高集成度和小型化的光电器件的发展。硫化锡（SnS）纳米片对紫外线和部分可见光都有明显的光响应，但由于其原子层厚度的限制，光电性能一般。在此，我们报道了一种简便的方法，可显著提高SnS薄片的电学和光电性能。通过将SnS与金等离子体纳米结构集成，光电流（I）增加了20倍以上。相应的响应度（R）、光增益（G）和探测率（D*）分别提高了约2200%、2200%和600%。在532nm波长下，金纳米颗粒-硫化锡场效应晶体管（FET）的响应度和探测率分别为1125.9 A W和2.12×10琼斯。尽管SnS光探测器原子级超薄，但受益于局域表面等离子体共振，实现了优异的光电性能，这是仅由原始SnS构成的器件通常无法实现的。
