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全无机CsPbSnBr钙钛矿中的带隙调控

Band-Gap Tuning in All-Inorganic CsPbSnBr Perovskites.

作者信息

Schwartz Heidi A, Laurenzen Hannah, Marzouk Asma, Runkel Manuel, Brinkmann Kai Oliver, Rogalla Detlef, Riedl Thomas, Ashhab Sahel, Olthof Selina

机构信息

Department of Chemistry, University of Cologne, Greinstrasse 4-6, 50939 Cologne, Germany.

Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Qatar Foundation, P.O. Box 34110, Doha 122104, Qatar.

出版信息

ACS Appl Mater Interfaces. 2021 Jan 27;13(3):4203-4210. doi: 10.1021/acsami.0c20285. Epub 2021 Jan 12.

Abstract

We investigate all-inorganic perovskite CsPbSnBr thin films to determine the variations in the band gap and electronic structure associated with the Pb/Sn ratio. We observe that the band gap can be tuned between 1.86 eV ( = 0) and 2.37 eV ( = 1). Intriguingly, this change is nonlinear in , with a bowing parameter of 0.9 eV; furthermore, a slight band gap narrowing is found for low Pb content (minimum ∼ 0.3). The wide tunability of the band gap makes CsPbSnBr a promising material, e.g., for a wide-gap subcell in tandem applications or for color-tunable light-emitting diodes. Employing photoelectron spectroscopy, we show that the valence band varies with the Pb/Sn ratio, while the conduction band is barely affected.

摘要

我们研究了全无机钙钛矿CsPbSnBr薄膜,以确定与Pb/Sn比率相关的带隙和电子结构变化。我们观察到带隙可在1.86 eV(x = 0)和2.37 eV(x = 1)之间调节。有趣的是,这种变化在x中是非线性的,弯曲参数为0.9 eV;此外,对于低Pb含量(最小x ∼ 0.3),发现带隙略有变窄。带隙的广泛可调性使CsPbSnBr成为一种有前途的材料,例如用于串联应用中的宽隙子电池或用于颜色可调发光二极管。利用光电子能谱,我们表明价带随Pb/Sn比率而变化,而导带几乎不受影响。

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