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单电子电路的随机行走基准

A random-walk benchmark for single-electron circuits.

机构信息

Physikalisch-Technische Bundesanstalt, Braunschweig, 38116, Germany.

Faculty of Computing, University of Latvia, 19 Raina Boulevard, Riga, LV-1586, Latvia.

出版信息

Nat Commun. 2021 Jan 12;12(1):285. doi: 10.1038/s41467-020-20554-w.

Abstract

Mesoscopic integrated circuits aim for precise control over elementary quantum systems. However, as fidelities improve, the increasingly rare errors and component crosstalk pose a challenge for validating error models and quantifying accuracy of circuit performance. Here we propose and implement a circuit-level benchmark that models fidelity as a random walk of an error syndrome, detected by an accumulating probe. Additionally, contributions of correlated noise, induced environmentally or by memory, are revealed as limits of achievable fidelity by statistical consistency analysis of the full distribution of error counts. Applying this methodology to a high-fidelity implementation of on-demand transfer of electrons in quantum dots we are able to utilize the high precision of charge counting to robustly estimate the error rate of the full circuit and its variability due to noise in the environment. As the clock frequency of the circuit is increased, the random walk reveals a memory effect. This benchmark contributes towards a rigorous metrology of quantum circuits.

摘要

介观集成电路旨在对基本量子系统进行精确控制。然而,随着保真度的提高,越来越罕见的错误和组件串扰给验证错误模型和量化电路性能的准确性带来了挑战。在这里,我们提出并实现了一个电路级基准,该基准将保真度建模为错误综合征的随机游走,由累积探针检测到。此外,通过对错误计数的完整分布进行统计一致性分析,可以揭示环境或记忆引起的相关噪声的贡献,作为可实现保真度的限制。将这种方法应用于量子点中按需转移电子的高保真度实现,我们能够利用电荷计数的高精度来稳健地估计整个电路的错误率及其由于环境噪声引起的可变性。随着电路的时钟频率增加,随机游走揭示了记忆效应。该基准有助于对量子电路进行严格的计量。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a5d/7804119/ecbb324d6121/41467_2020_20554_Fig1_HTML.jpg

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