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在一维硅量子点阵列中传输单个电荷。

Shuttling a single charge across a one-dimensional array of silicon quantum dots.

机构信息

Department of Physics, Princeton University, Princeton, NJ, 08544, USA.

出版信息

Nat Commun. 2019 Mar 5;10(1):1063. doi: 10.1038/s41467-019-08970-z.

Abstract

Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems are constrained to two dimensions with nearest neighbor connectivity. For spins in silicon, new methods for quantum state transfer should be developed to achieve connectivity beyond nearest-neighbor exchange. Here we demonstrate shuttling of a single electron across a linear array of nine series-coupled silicon quantum dots in ~50 ns via a series of pairwise interdot charge transfers. By constructing more complex pulse sequences we perform parallel shuttling of two and three electrons at a time through the array. These experiments demonstrate a scalable approach to physically transporting single electrons across large silicon quantum dot arrays.

摘要

硅自旋量子比特容错操作已经取得了重大进展,单量子比特保真度超过 99.9%,基于交换耦合的双量子比特门的多次演示,以及相干单自旋光子耦合的实现。在量子寄存器中任意对空间分离的量子比特进行耦合是一个重大挑战,因为大多数量子比特系统被限制在具有最近邻连接的二维空间中。对于硅中的自旋,应该开发新的量子态转移方法来实现超出最近邻交换的连接。在这里,我们通过一系列成对的点间电荷转移,证明了单个电子在九个串联硅量子点的线性阵列中以~50ns 的速度穿梭。通过构建更复杂的脉冲序列,我们可以同时通过阵列进行两个和三个电子的并行穿梭。这些实验证明了一种可扩展的方法,可以将单个电子物理地传输穿过大型硅量子点阵列。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d87/6401174/6ba09dd22fd8/41467_2019_8970_Fig1_HTML.jpg

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