Houzet M, Glazman L I
Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, 38000 Grenoble, France.
Departments of Physics and Applied Physics, Yale University, New Haven, Connecticut 06520, USA.
Phys Rev Lett. 2020 Dec 31;125(26):267701. doi: 10.1103/PhysRevLett.125.267701.
We investigate inelastic microwave photon scattering by a transmon qubit embedded in a high-impedance circuit. The transmon undergoes a charge-localization (Schmid) transition upon the impedance reaching the critical value. Because of the unique transmon level structure, the fluorescence spectrum carries a signature of the transition point. At higher circuit impedance, quasielastic photon scattering may account for the main part of the inelastic scattering cross section; we find its dependence on the qubit and circuit parameters.
我们研究了嵌入在高阻抗电路中的transmon量子比特的非弹性微波光子散射。当阻抗达到临界值时，transmon会经历电荷局域化（施密德）转变。由于transmon独特的能级结构，荧光光谱带有转变点的特征。在更高的电路阻抗下，准弹性光子散射可能占非弹性散射截面的主要部分；我们发现了它对量子比特和电路参数的依赖性。
