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跨导量子比特在施密德转变处的临界荧光

Critical Fluorescence of a Transmon at the Schmid Transition.

作者信息

Houzet M, Glazman L I

机构信息

Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, 38000 Grenoble, France.

Departments of Physics and Applied Physics, Yale University, New Haven, Connecticut 06520, USA.

出版信息

Phys Rev Lett. 2020 Dec 31;125(26):267701. doi: 10.1103/PhysRevLett.125.267701.

Abstract

We investigate inelastic microwave photon scattering by a transmon qubit embedded in a high-impedance circuit. The transmon undergoes a charge-localization (Schmid) transition upon the impedance reaching the critical value. Because of the unique transmon level structure, the fluorescence spectrum carries a signature of the transition point. At higher circuit impedance, quasielastic photon scattering may account for the main part of the inelastic scattering cross section; we find its dependence on the qubit and circuit parameters.

摘要

我们研究了嵌入在高阻抗电路中的transmon量子比特的非弹性微波光子散射。当阻抗达到临界值时,transmon会经历电荷局域化(施密德)转变。由于transmon独特的能级结构,荧光光谱带有转变点的特征。在更高的电路阻抗下,准弹性光子散射可能占非弹性散射截面的主要部分;我们发现了它对量子比特和电路参数的依赖性。

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