Dortaj Hannaneh, Dolatyari Mahboubeh, Zarghami Armin, Alidoust Farid, Rostami Ali, Matloub Samiye, Yadipour Reza
Photonics and Nanocrystals Research Lab (PNRL), University of Tabriz, 5166614761, Tabriz, Iran.
SP-EPT Lab., ASEPE Company, Industrial Park of Advanced Technologies, 5364196795, Tabriz, Iran.
Sci Rep. 2021 Jan 15;11(1):1533. doi: 10.1038/s41598-020-80847-4.
Infrared (IR) cameras based on semiconductors grown by epitaxial methods face two main challenges, which are cost and operating at room temperature. The alternative new technologies which can tackle these two difficulties develop new and facile material and methods. Moreover, the implementation of high speed camera, which makes high resolution images with normal methods, is very expensive. In this paper, a new nanostructure based on a cost-effective solution processed technology for the implementation of the high-speed mid-infrared light camera at room temperature is proposed. To this end, the chemically synthesized PbSe-PbI core-shell Quantum Dots (QDs) are used. In this work, a camera including 10 × 10 pixels is fabricated and synthesized QDs spin-coated on interdigitated contact (IDC) and then the fabricated system passivated by epoxy resin. Finally, using an electronic reading circuit, all pixels are converted to an image on the monitor. To model the fabricated camera, we solved Schrodinger-Poisson equations self consistently. Then output current from each pixel is modeled based on semiconductor physics and dark and photocurrent, as well as Responsivity and Detectivity, are calculated. Then the fabricated device is examined, and dark and photocurrents are measured and compared to the theoretical results. The obtained results indicate that the obtained theoretical and measured experimental results are in good agreement together. The fabricated detector is high speed with a rise time of 100 ns. With this speed, we can get 10 million frames per second; this means we can get very high-resolution images. The speed of operation is examined experimentally using a chopper that modulates input light with 50, 100, 250, and 500 Hz. It is shown that the fabricated device operates well in these situations, and it is not limited by the speed of detector. Finally, for the demonstration of the proposed device operation, some pictures and movies taken by the camera are attached and inserted in the paper.
基于外延生长半导体的红外（IR）相机面临两个主要挑战，即成本和室温下的运行。能够解决这两个难题的替代新技术开发了新的简便材料和方法。此外，采用常规方法制作高分辨率图像的高速相机成本非常高。本文提出了一种基于具有成本效益的溶液处理技术的新型纳米结构，用于在室温下实现高速中红外光相机。为此，使用了化学合成的PbSe-PbI核壳量子点（QDs）。在这项工作中，制作了一个包含10×10像素的相机，将合成的量子点旋涂在叉指式接触（IDC）上，然后用环氧树脂对制作好的系统进行钝化处理。最后，使用电子读取电路，将所有像素转换为显示器上的图像。为了对制作的相机进行建模，我们自洽地求解了薛定谔-泊松方程。然后根据半导体物理对每个像素的输出电流进行建模，并计算暗电流和光电流以及响应度和探测率。接着对制作的器件进行检测，测量暗电流和光电流，并与理论结果进行比较。所得结果表明，理论结果与实测实验结果吻合良好。制作的探测器速度很高，上升时间为100纳秒。以这个速度，我们每秒可以获得1000万帧；这意味着我们可以获得非常高分辨率的图像。使用斩波器以50、100、250和500赫兹调制输入光，通过实验检测了其运行速度。结果表明，制作的器件在这些情况下运行良好，不受探测器速度的限制。最后，为了演示所提出器件的运行情况，本文附上并插入了相机拍摄的一些图片和视频。
