Zhang Bei, Adriany Gregor, Delabarre Lance, Radder Jerahmie, Lagore Russell, Rutt Brian, Yang Qing X, Ugurbil Kamil, Lattanzi Riccardo
Center for Advanced Imaging Innovation and Research (CAI2R), New York University School of Medicine, New York, New York, USA.
Bernard and Irene Schwartz Center for Biomedical Imaging, New York University School of Medicine, New York, New York, USA.
Magn Reson Med. 2021 Jun;85(6):3522-3530. doi: 10.1002/mrm.28670. Epub 2021 Jan 19.
In this work, we investigated how the position of the radiofrequency (RF) shield can affect the signal-to-noise ratio (SNR) of a receive RF coil. Our aim was to obtain physical insight for the design of a 10.5T 32-channel head coil, subject to the constraints on the diameter of the RF shield imposed by the head gradient coil geometry.
We used full-wave numerical simulations to investigate how the SNR of an RF receive coil depends on the diameter of the RF shield at ultra-high magnetic field (UHF) strengths (≥7T).
Our simulations showed that there is an SNR-optimal RF shield size at UHF strength, whereas at low field the SNR monotonically increases with the shield diameter. For a 32-channel head coil at 10.5T, an optimally sized RF shield could act as a cylindrical waveguide and increase the SNR in the brain by 27% compared to moving the shield as far as possible from the coil. Our results also showed that a separate transmit array between the RF shield and the receive array could considerably reduce SNR even if they are decoupled.
At sufficiently high magnetic field strength, the design of local RF coils should be optimized together with the design of the RF shield to benefit from both near field and resonant modes.
在本研究中,我们探究了射频(RF)屏蔽的位置如何影响接收RF线圈的信噪比(SNR)。我们的目标是在头部梯度线圈几何形状对RF屏蔽直径的限制条件下,为10.5T 32通道头部线圈的设计获得物理见解。
我们使用全波数值模拟来研究在超高磁场(UHF)强度(≥7T)下,RF接收线圈的SNR如何依赖于RF屏蔽的直径。
我们的模拟表明,在UHF强度下存在一个SNR最优的RF屏蔽尺寸,而在低场时,SNR随屏蔽直径单调增加。对于10.5T的32通道头部线圈,尺寸优化的RF屏蔽可以作为圆柱形波导,与将屏蔽尽可能远离线圈相比,可使大脑中的SNR提高27%。我们的结果还表明,即使RF屏蔽和接收阵列之间已去耦,在它们之间设置一个单独的发射阵列也会显著降低SNR。
在足够高的磁场强度下,局部RF线圈的设计应与RF屏蔽的设计一起优化,以便从近场和谐振模式中都受益。