Kim Jun-Hyun, You Sanghyun, Kim Chang-Koo
Institute of Convergent Chemical Engineering and Technology, SungKyunKwan University, Seobu-ro 2066, Jangan-gu, Suwon 16419, Korea.
Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, Worldcup-ro 206, Yeongtong-gu, Suwon 16499, Korea.
Materials (Basel). 2021 Jan 14;14(2):380. doi: 10.3390/ma14020380.
Si surfaces were texturized with periodically arrayed oblique nanopillars using slanted plasma etching, and their optical reflectance was measured. The weighted mean reflectance () of the nanopillar-arrayed Si substrate decreased monotonically with increasing angles of the nanopillars. This may have resulted from the increase in the aspect ratio of the trenches between the nanopillars at oblique angles due to the shadowing effect. When the aspect ratios of the trenches between the nanopillars at 0° (vertical) and 40° (oblique) were equal, the of the Si substrates arrayed with nanopillars at 40° was lower than that at 0°. This study suggests that surface texturing of Si with oblique nanopillars reduces light reflection compared to using a conventional array of vertical nanopillars.
使用倾斜等离子体蚀刻对硅表面进行周期性排列的倾斜纳米柱纹理化处理，并测量其光学反射率。纳米柱阵列硅衬底的加权平均反射率（）随着纳米柱角度的增加而单调下降。这可能是由于阴影效应导致倾斜角度下纳米柱之间沟槽的纵横比增加所致。当纳米柱之间在0°（垂直）和40°（倾斜）时沟槽的纵横比相等时，排列有40°纳米柱的硅衬底的 低于0°时的。本研究表明，与使用传统的垂直纳米柱阵列相比，用倾斜纳米柱对硅进行表面纹理化可减少光反射。
