Zhang Qiang, Wang Xicheng, Zhou Xiaopeng, Wang Yuhua
Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Department of Materials Science, School of Physical Science and Technology, National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University, Lanzhou 730000, China.
J Phys Chem Lett. 2021 Jan 28;12(3):1087-1092. doi: 10.1021/acs.jpclett.0c03737. Epub 2021 Jan 20.
Traditional white light-emitting diodes (WLEDs) are limited by the energy loss due to reabsorption. Integrating binary complementary color phosphors with near-ultraviolet (n-UV) LED chips can be a good solution, and the core of it is to develop yellow-emitting phosphors. In this work, we have designed RbSrCaPO:Eu solid solutions with yellow-orange color-tunable luminescence. The crystal structure, luminescence properties, and potential applications for WLEDs were explored systematically. Under n-UV light excitation, the phosphors efficiently emit broadband yellow-orange emission. The reasons and mechanisms of the variation of the PL/PLE spectra have been investigated. The optimal RbSrPO:0.5% Eu sample exhibits a high quantum efficiency of 72.96% with a good color purity of 87.1%. Upon combination of the BAM:Eu and RbSrPO:0.5% Eu phosphors with a 380 nm n-UV chip, a WLED device is fabricated and can emit white light with good performance.
传统的白色发光二极管（WLED）受到再吸收导致的能量损失的限制。将二元互补色磷光体与近紫外（n-UV）LED芯片集成可能是一个很好的解决方案，其核心是开发发黄光的磷光体。在这项工作中，我们设计了具有黄橙色可调发光的RbSrCaPO:Eu固溶体。系统地探索了其晶体结构、发光特性以及在WLED中的潜在应用。在n-UV光激发下，这些磷光体有效地发射宽带黄橙色光。研究了PL/PLE光谱变化的原因和机制。最佳的RbSrPO:0.5% Eu样品表现出72.96%的高量子效率和87.1%的良好色纯度。将BAM:Eu和RbSrPO:0.5% Eu磷光体与380 nm的n-UV芯片组合后，制造出了一个WLED器件，该器件能够发射出性能良好的白光。
