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合成气分子作为二维六方氮化硼缺陷的探针:它们的吸附与振动

Syngas molecules as probes for defects in 2D hexagonal boron nitride: their adsorption and vibrations.

作者信息

Jiang Tao, Le Duy, Rawal Takat B, Rahman Talat S

机构信息

Department of Physics, University of Central Florida, Orlando, FL 32816, USA.

出版信息

Phys Chem Chem Phys. 2021 Apr 7;23(13):7988-8001. doi: 10.1039/d0cp05943a. Epub 2021 Jan 21.

Abstract

Single-layer, defect-laden hexagonal boron nitride (dh-BN) is attracting a great deal of attention for its diverse applications: catalysis on the one hand, and single photon emission on the other. As possible probes for identifying some common defects in single-layer h-BN, we present results of ab initio calculations for the adsorption and vibrational characteristics of syngas molecules (H, CO, CO) on dh-BN containing one of four types of defects: nitrogen vacancy (V), boron vacancy (V), Stone-Wales defect (SW), and nitrogen substituted by boron (B). Through a comparative examination of adsorption features, charge transfer, electronic structure, and vibrational spectrum, we obtain a deep understanding of the interaction of these molecules with dh-BN and the role of the defect states. We find that while CO, CO and atomic hydrogen chemisorb, molecular H physisorbs on dh-BN with the four considered defect types. V and V show strong affinity for CO and CO since the defect states induced by them lie close to the Fermi level. SW does not favor adsorption of these small molecules, as the process for each is endothermic. In the case of B, CO adsorbs strongly but CO only weakly. Vibrational frequencies of notable modes localized at the adsorbed molecules are analyzed and suggested as measures for identification of the defect type. Through a simple comparison of adsorption characteristics of the molecules on these defects, we propose dh-BN with V to be a good catalyst candidate for CO hydrogenation.

摘要

单层、充满缺陷的六方氮化硼(dh-BN)因其多样的应用而备受关注:一方面用于催化,另一方面用于单光子发射。作为识别单层h-BN中一些常见缺陷的可能探针,我们给出了从头算计算结果,涉及合成气分子(H、CO、CO)在含有四种缺陷之一的dh-BN上的吸附和振动特性,这四种缺陷分别是氮空位(V)、硼空位(V)、斯通-威尔士缺陷(SW)以及硼取代氮(B)。通过对吸附特征、电荷转移、电子结构和振动光谱的比较研究,我们深入了解了这些分子与dh-BN的相互作用以及缺陷态的作用。我们发现,对于所考虑的四种缺陷类型的dh-BN,CO、CO和原子氢发生化学吸附,而分子H发生物理吸附。V和V对CO和CO表现出很强的亲和力,因为它们诱导的缺陷态靠近费米能级。SW不有利于这些小分子的吸附,因为每个过程都是吸热的。在B的情况下,CO强烈吸附而CO只是微弱吸附。分析了吸附分子处显著模式的振动频率,并建议将其作为识别缺陷类型的手段。通过简单比较这些缺陷上分子的吸附特性,我们提出具有V的dh-BN是CO加氢的良好催化剂候选物。

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