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用于平板X射线源应用的大面积铟掺杂氧化锌纳米线场发射体阵列的高电流场发射

High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application.

作者信息

Zhao Yangyang, Chen Yicong, Zhang Guofu, Zhan Runze, She Juncong, Deng Shaozhi, Chen Jun

机构信息

Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China.

出版信息

Nanomaterials (Basel). 2021 Jan 18;11(1):240. doi: 10.3390/nano11010240.

DOI:10.3390/nano11010240
PMID:33477592
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7831334/
Abstract

Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.

摘要

大面积氧化锌（ZnO）纳米线阵列在平板X射线源和探测器中具有重要应用。掺杂是通过改变纳米线的导电性和晶格结构来增强发射电流的有效方法。本文采用热氧化法在氧化铟锡涂层玻璃基板上制备了大面积铟掺杂ZnO纳米线阵列。通过直接氧化In-Zn合金薄膜实现了高达1 at%的铟掺杂浓度。随后利用自催化气-液-固生长机制对生长过程进行了解释。场发射测量表明，对于面积为4.8×4.8 cm的大面积铟掺杂样品，可获得约20 mA的高发射电流。这种高发射电流归因于铟掺杂剂引起的高结晶度和导电性变化。此外，还实现了这些铟掺杂ZnO纳米线阵列在平板X射线源中的应用，并展示了清晰的X射线成像。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/5d2f5a3e6f53/nanomaterials-11-00240-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/cc28e02f4596/nanomaterials-11-00240-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/a399bbef9db9/nanomaterials-11-00240-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/3e3f27caf9fe/nanomaterials-11-00240-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/d49cd24bfc22/nanomaterials-11-00240-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/764f5e10348a/nanomaterials-11-00240-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/062b3b15f22d/nanomaterials-11-00240-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/61d0b5e59eb5/nanomaterials-11-00240-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/00295a0b17f9/nanomaterials-11-00240-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/f8ef1d27a467/nanomaterials-11-00240-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/5d2f5a3e6f53/nanomaterials-11-00240-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/cc28e02f4596/nanomaterials-11-00240-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/a399bbef9db9/nanomaterials-11-00240-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/3e3f27caf9fe/nanomaterials-11-00240-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/d49cd24bfc22/nanomaterials-11-00240-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/764f5e10348a/nanomaterials-11-00240-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/062b3b15f22d/nanomaterials-11-00240-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/61d0b5e59eb5/nanomaterials-11-00240-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/00295a0b17f9/nanomaterials-11-00240-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/f8ef1d27a467/nanomaterials-11-00240-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e32/7831334/5d2f5a3e6f53/nanomaterials-11-00240-g010.jpg

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