全真空密封二极管结构可寻址氧化锌纳米线冷阴极平板X射线源：制备与成像应用
Fully Vacuum-Sealed Diode-Structure Addressable ZnO Nanowire Cold Cathode Flat-Panel X-ray Source: Fabrication and Imaging Application.
作者信息
Wang Chengyun, Zhang Guofu, Xu Yuan, Chen Yicong, Deng Shaozhi, Chen Jun
机构信息
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China.
School of Biomedical Engineering, Southern Medical University, Guangzhou 510515, China.
出版信息
Nanomaterials (Basel). 2021 Nov 18;11(11):3115. doi: 10.3390/nano11113115.
A fully vacuum-sealed addressable flat-panel X-ray source based on ZnO nanowire field emitter arrays (FEAs) was fabricated. The device has a diode structure composed of cathode panel and anode panel. ZnO nanowire cold cathodes were prepared on strip electrodes on a cathode panel and Mo thin film strips were prepared on an anode panel acting as the target. Localized X-ray emission was realized by cross-addressing of cathode and anode electrodes. A radiation dose rate of 10.8 μGy/s was recorded at the anode voltage of 32 kV. The X-ray imaging of objects using different addressing scheme was obtained and the imaging results were analyzed. The results demonstrated the feasibility of achieving addressable flat-panel X-ray source using diode-structure for advanced X-ray imaging.
制备了一种基于ZnO纳米线场发射阵列（FEAs）的全真空密封可寻址平板X射线源。该器件具有由阴极面板和阳极面板组成的二极管结构。在阴极面板上的条形电极上制备了ZnO纳米线冷阴极，在作为靶的阳极面板上制备了Mo薄膜条。通过阴极和阳极电极的交叉寻址实现了局部X射线发射。在32 kV的阳极电压下记录到的辐射剂量率为10.8 μGy/s。利用不同的寻址方案获得了物体的X射线成像，并对成像结果进行了分析。结果证明了使用二极管结构实现可寻址平板X射线源用于先进X射线成像的可行性。
Zotero 插件