对 Cu(α, n)Ga 反应进行核模型分析，以生产高达 40 MeV 的 Ga。
Nuclear model analysis of the Cu(α, n)Ga reaction for the production of Ga up to 40 MeV.
机构信息
Department of Physics, Government College University, Lahore, 54000, Lahore, Pakistan.
Department of Physics, Government Islamia College, Civil Lines, Lahore, 54000, Lahore, Pakistan.
出版信息
Appl Radiat Isot. 2021 Apr;170:109590. doi: 10.1016/j.apradiso.2021.109590. Epub 2021 Jan 19.
The charge particle (α) induced reactions on enriched copper (Cu) are investigated for the production of Ga. The data sets of experimental cross sections are compiled, normalized and nuclear model analysis is done using calculational codes namely, ALICE-IPPE, TALYS 1.95 and EMPIRE 3.2. The theoretical production cross sections via alpha particle induced reactions are calculated to present a set of recommended cross sections. The calculated cross sections are utilized to deduce thick target yield (TTY) for the Cu (α, n) Ga reaction. The range of energy for production of Ga is suggested up to 40 MeV having least contribution of radio-impurities.
研究了荷电粒子 (α) 在浓缩铜 (Cu) 上的诱发反应，以生产 Ga。编译了实验截面数据集，进行了归一化，并使用计算代码 ALICE-IPPE、TALYS 1.95 和 EMPIRE 3.2 进行了核模型分析。通过α粒子诱发反应计算了理论生产截面，以给出一组推荐的截面。利用计算截面推导了 Cu(α,n)Ga 反应的厚靶产额 (TTY)。建议 Ga 的产生能区高达 40 MeV，此时放射性杂质的贡献最小。
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