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用于产生非标准正电子发射体砷的锗(p,xn)砷反应从阈能到45兆电子伏的激发函数。

Excitation functions of Ge(p,xn)As reactions from threshold up to 45 MeV for production of the non-standard positron emitter As.

作者信息

Hussain Mazhar, Mues Genannt Koers Lucas, Spahn Ingo, Spellerberg Stefan, Neumaier Bernd, Qaim Syed M

机构信息

Institut für Neurowissenschaften und Medizin, INM-5: Nuklearchemie, Forschungszentrum Jülich (FZJ), 52425, Jülich, Germany.

Department of Physics, Government College University Lahore (GCUL), Lahore, 54000, Pakistan.

出版信息

Sci Rep. 2024 Jul 19;14(1):16724. doi: 10.1038/s41598-024-67319-9.

DOI:10.1038/s41598-024-67319-9
PMID:39030288
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11271559/
Abstract

Nuclear reaction cross sections for the formation of As and As in proton-induced reactions on enriched Ge targets were measured up to 45 MeV utilizing three different cyclotrons at the Forschungszentrum Jülich. The stacked-thin sample activation technique in combination with high-resolution γ-ray spectrometry was used. The major γ-ray peaks of As and As formed via the Ge(p,n)As and Ge(p,2n)As reactions, respectively, were analyzed. The incident proton energy and flux on a foil were determined using several monitor reactions. Based on integrated counts, irradiation data and the nuclear decay data, the reaction cross sections were measured. All data describe the first measurements. Theoretical nuclear model calculations were then carried out by using the codes TALYS 1.96, EMPIRE 3.2 and ALICE-IPPE. A very good agreement between the measured data and calculated values was found. The new data enabled us to calculate the thick target yields and estimate the radionuclidic impurities for a given energy range. Over the optimum energy range Ep = 14 → 7 MeV, the calculated thick target yield of As amounts to 272 MBq/μAh with no As impurity at all. The Ge(p,n)As reaction on the enriched Ge is thus very suitable for clinical scale production of As at a medical cyclotron.

摘要

利用于利希研究中心的三台不同回旋加速器,测量了质子轰击富集锗靶时形成砷-74和砷-76的核反应截面,能量高达45兆电子伏。采用了叠层薄样品活化技术与高分辨率γ射线能谱法相结合的方法。分别分析了通过锗(p,n)砷-74和锗(p,2n)砷-76反应形成的砷-74和砷-76的主要γ射线峰。使用几种监测反应确定箔片上的入射质子能量和通量。基于积分计数、辐照数据和核衰变数据,测量了反应截面。所有数据均为首次测量结果。然后使用TALYS 1.96、EMPIRE 3.2和ALICE-IPPE代码进行了理论核模型计算。发现测量数据与计算值之间有很好的一致性。新数据使我们能够计算厚靶产额并估计给定能量范围内的放射性核素杂质。在最佳能量范围Ep = 14→7兆电子伏内,计算出的砷-74厚靶产额为272兆贝可/微安时,且完全没有砷-76杂质。因此,富集锗上的锗(p,n)砷-74反应非常适合在医用回旋加速器上进行临床规模的砷-74生产。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/a305e5543ca6/41598_2024_67319_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/1e2b9fc9899a/41598_2024_67319_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/f31ec878d27e/41598_2024_67319_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/d6e146a2c600/41598_2024_67319_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/dfe01f9eb0ef/41598_2024_67319_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/dc027f8ba669/41598_2024_67319_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/1ed96a59ff42/41598_2024_67319_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/a305e5543ca6/41598_2024_67319_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/1e2b9fc9899a/41598_2024_67319_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/f31ec878d27e/41598_2024_67319_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/d6e146a2c600/41598_2024_67319_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/dfe01f9eb0ef/41598_2024_67319_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/dc027f8ba669/41598_2024_67319_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/1ed96a59ff42/41598_2024_67319_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49ee/11271559/a305e5543ca6/41598_2024_67319_Fig7_HTML.jpg

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