The effects of cesium lead bromide quantum dots on the performance of copper phthalocyanine-based organic field-effect transistors.

Highly luminescent all-inorganic cesium lead bromide (CsPbBr) perovskite quantum dots (QDs) have been extensively used as a photosensitizer in optoelectronic devices, while p-type small-organic-molecule copper phthalocyanine (CuPc) is also widely used as a photoactive material in solar cells, organic field-effect transistors (OFETs), etc. In this paper, we report the preparation of a CsPbBr-QDs/CuPc heterostructure to study the effect of CsPbBr-QDs on CuPc. The optical properties of both CuPc and the QDs/CuPc heterostructure were compared and contrasted using UV-vis absorbance and photoluminescence (PL) measurements. Furthermore, to study their electronic and charge transfer features, we fabricated field-effect transistors (FETs) on both pristine CuPc and QDs/CuPc heterostructure thin films and studied their photoresponsive electrical characteristics. Both pristine and QDs/CuPc-based FETs showed an enhancement in current and carrier mobility under illumination. The enhancement in the current and carrier mobility of the QDs/CuPc-based FETs is due to a large number of photoexcited charge carriers. We also observed that the current and carrier mobility in the QDs/CuPc heterostructure-based FET were lower than those of the pristine CuPc-based FET. This can be explained by the n-type doping effect of CsPbBr QDs on CuPc, which reduces the accumulation of holes in the active p-channel near the insulating layer and causes charge to be transferred from the QDs to the CuPc. Thus, we have observed a charge transfer effect in the CsPbBr QDs/CuPc heterostructure, which can be used in optoelectronic devices.