扭曲双层双层石墨烯中的门控可调分数陈绝缘体

Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene.

作者信息

Liu Zhao, Abouelkomsan Ahmed, Bergholtz Emil J

机构信息

Zhejiang Institute of Modern Physics, Zhejiang University, Hangzhou 310027, China.

Department of Physics, Stockholm University, AlbaNova University Center, 106 91 Stockholm, Sweden.

出版信息

Phys Rev Lett. 2021 Jan 15;126(2):026801. doi: 10.1103/PhysRevLett.126.026801.

DOI:10.1103/PhysRevLett.126.026801

PMID:33512191

Abstract

We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number C=1 and C=2 bands, occur at high temperatures and without the need for an external magnetic field.

摘要

我们预测，扭曲双层石墨烯将成为一个通用平台，通过调节栅极电势和扭曲角，可轻松实现分数陈绝缘体。值得注意的是，这些拓扑有序的物态，包括陈数C = 1和C = 2能带中的自旋单重态哈珀林态和自旋极化态，在高温下出现，且无需外部磁场。