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导联 III 的 R/S 比预测希氏旁区起源室性心律失常消融的成功率。

R/S Ratio in Lead III Predicts Successful Ablation of Ventricular Arrhythmias Originating in Para-Hisian Region.

机构信息

Department of Cardiology, Second Affiliated Hospital, and Yuying Children's Hospital, Wenzhou Medical University, Wenzhou, China.

Department of Cardiology, Second Affiliated Hospital, and Yuying Children's Hospital, Wenzhou Medical University, Wenzhou, China.

出版信息

JACC Clin Electrophysiol. 2021 Jun;7(6):719-730. doi: 10.1016/j.jacep.2020.10.012. Epub 2021 Jan 27.

Abstract

OBJECTIVES

The aim of this study was to investigate the electrocardiographic characteristics of ventricular arrhythmias (VAs) originating near the His bundle (HB) and use the R/S ratio in lead III (R/S ratio) to predict successful ablation of para-Hisian VAs.

BACKGROUND

Catheter ablation for idiopathic VAs near the HB is often challenging, and data are limited.

METHODS

The present study included 134 consecutive patients undergoing catheter ablation of para-Hisian VAs. The electrocardiographic characteristics in these patients were retrospectively evaluated with successful ablation and failed ablation.

RESULTS

Successful ablation was achieved in 115 (85.8%) of the 134 patients. There was no significant difference in QRS duration between the successful and the failed ablation groups. The ablation success rate was significantly lower for para-Hisian VAs with a predominantly positive R wave in lead III than those with a predominantly negative S wave in lead III. The significant factor associated with successful ablation was the R/S ratio. The R/S ratio ≤1.1 predicted the successful ablation of para-Hisian VAs with high sensitivity (80.9%) and specificity (94.7%). The R/S ratio of >1.2 had high sensitivity (100.0%) and specificity (82.8%) to predict the distance <5 mm from the site of origin of para-Hisian VAs to the site recording the largest HB potential.

CONCLUSIONS

The R/S ratio was a helpful predictor of the successful ablation of VAs originating in the vicinity of the HB. This may be useful for planning ablation of para-Hisian VAs and minimizing the risk of inadvertent atrioventricular block.

摘要

目的

本研究旨在探讨起源于希氏束(HB)附近的室性心律失常(VAs)的心电图特征,并利用 III 导联的 R/S 比值(R/S 比值)预测旁希氏 VA 的消融成功。

背景

HB 附近特发性 VA 的导管消融常常具有挑战性,且相关数据有限。

方法

本研究纳入了 134 例接受旁希氏 VA 导管消融的连续患者。回顾性评估这些患者的心电图特征,分为消融成功组和消融失败组。

结果

134 例患者中,115 例(85.8%)消融成功。成功消融组与失败消融组的 QRS 时限无显著差异。III 导联中以正向 R 波为主的旁希氏 VA 的消融成功率明显低于以负向 S 波为主的旁希氏 VA。与消融成功相关的显著因素是 R/S 比值。R/S 比值≤1.1 预测旁希氏 VA 的消融成功率具有较高的敏感性(80.9%)和特异性(94.7%)。R/S 比值>1.2 预测旁希氏 VA 起源部位与记录 HB 最大电位部位之间的距离<5mm 具有较高的敏感性(100.0%)和特异性(82.8%)。

结论

R/S 比值是预测 HB 附近起源的 VA 消融成功的有用预测指标。这可能有助于计划旁希氏 VA 的消融,最大限度地降低无意中发生房室传导阻滞的风险。

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