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利用 ZrO 纳米粒子精确抑制金属管来生长半导体单壁碳纳米管阵列。

Growth of Semiconducting Single-Walled Carbon Nanotubes Array by Precisely Inhibiting Metallic Tubes Using ZrO Nanoparticles.

机构信息

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.

China Bluestar Chengrand Chemical Co. Ltd., 4th Xinghua Road, Xinjin Industry Zone B, Chengdu, 611430, P. R. China.

出版信息

Small. 2021 Dec;17(48):e2006605. doi: 10.1002/smll.202006605. Epub 2021 Feb 1.

DOI:10.1002/smll.202006605
PMID:33522113
Abstract

Synthesis of high-quality single-walled carbon nanotubes arrays with pure semiconducting type is crucial for the fabrication of integrated circuits in nanoscale. However, the naturally grown carbon nanotubes usually have diverse structures and properties. Here the bicomponent catalyst using Au and ZrO is designed and prepared. The Au nanoparticle serves as the catalysts for carbon feedstock cracking and facilitating the nucleation of carbon nanotubes, whereas the close-connected ZrO forms a localized etching zone around Au by releasing lattice oxygen and to inhibit the nucleation of metallic carbon nanotubes precisely. The obtained single-walled carbon nanotubes array show a high semiconducting content of >96%, on the basis of good performance of field-effect transistor devices. And such building of localized etching zone is compatible with other catalyst systems as a universal and efficient method for the scalable production of semiconducting carbon nanotubes.

摘要

合成高质量的具有纯半导体类型的单壁碳纳米管阵列对于在纳米尺度上制造集成电路至关重要。然而,天然生长的碳纳米管通常具有不同的结构和性能。在这里,设计并制备了使用 Au 和 ZrO 的双组分催化剂。Au 纳米颗粒用作碳原料裂解的催化剂,并促进碳纳米管的成核,而紧密相连的 ZrO 通过释放晶格氧在 Au 周围形成局部蚀刻区,并精确抑制金属碳纳米管的成核。所获得的单壁碳纳米管阵列显示出 >96%的高半导体含量,基于场效应晶体管器件的良好性能。并且这种局部蚀刻区的构建与其他催化剂体系兼容,是一种通用且高效的方法,可用于可扩展生产半导体碳纳米管。

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