Max Planck Institute for Solid State Research, Stuttgart, Germany.
Nanotechnology. 2010 Nov 26;21(47):475207. doi: 10.1088/0957-4484/21/47/475207. Epub 2010 Oct 29.
Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produced as a mixture of semiconducting and metallic nanotubes. Since only semiconducting nanotubes yield transistors, the metallic nanotubes are typically not utilized. However, integrated circuits often require not only transistors, but also resistive load devices. Here we show that many of the metallic carbon nanotubes that are deposited on the substrate along with the semiconducting nanotubes can be conveniently utilized as load resistors with favorable characteristics for the design of integrated circuits. We also demonstrate the fabrication of arrays of transistors and resistors, each based on an individual semiconducting or metallic carbon nanotube, and their integration on glass substrates into logic circuits with switching frequencies of up to 500 kHz using a custom-designed metal interconnect layer.
采用单个半导体碳纳米管作为沟道的纳米尺度晶体管在逻辑电路方面具有巨大的应用潜力，因为这种晶体管可以在玻璃或塑料衬底上制造，具有很高的集成密度。碳纳米管通常是作为半导体和金属纳米管的混合物来生产的。由于只有半导体纳米管才能产生晶体管，因此通常不利用金属纳米管。然而，集成电路通常不仅需要晶体管，还需要电阻负载器件。在这里，我们表明，与半导体纳米管一起沉积在衬底上的许多金属碳纳米管可以方便地用作负载电阻器，其特性对于集成电路的设计非常有利。我们还展示了基于单个半导体或金属碳纳米管的晶体管和电阻器阵列的制造，以及使用定制设计的金属互连线层将其集成到玻璃衬底上的逻辑电路中，其开关频率高达 500 kHz。
