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4H 碳化硅探测器对 D-D 中子的探测器响应及稳定性测量

Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide Detectors.

作者信息

Kushoro Matteo Hakeem, Rebai Marica, Tardocchi Marco, Altana Carmen, Cazzaniga Carlo, De Marchi Eliana, La Via Francesco, Meda Laura, Meli Alessandro, Parisi Miriam, Perelli Cippo Enrico, Pillon Mario, Trotta Antonio, Tudisco Salvo, Gorini Giuseppe

机构信息

Dipartimento di Fisica "G. Occhialini", Università di Milano-Bicocca, 20126 Milano, Italy.

Istituto per la Scienza e Tecnologia dei Plasmi, Consiglio Nazionale delle Ricerche, 20126 Milano, Italy.

出版信息

Materials (Basel). 2021 Jan 26;14(3):568. doi: 10.3390/ma14030568.

Abstract

The use of wide-band-gap solid-state neutron detectors is expanding in environments where a compact size and high radiation hardness are needed, such as spallation neutron sources and next-generation fusion machines. Silicon carbide is a very promising material for use as a neutron detector in these fields because of its high resistance to radiation, fast response time, stability and good energy resolution. In this paper, measurements were performed with neutrons from the ISIS spallation source with two different silicon carbide detectors together with stability measurements performed in a laboratory under alpha-particle irradiation for one week. Some consideration to the impact of the casing of the detector on the detector's counting rate is given. In addition, the detector response to Deuterium-Deuterium (D-D) fusion neutrons is described by comparing neutron measurements at the Frascati Neutron Generator with a GEANT4 simulation. The good stability measurements and the assessment of the detector response function indicate that such a detector can be used as both a neutron counter and spectrometer for 2-4 MeV neutrons. Furthermore, the absence of polarization effects during neutron and alpha irradiation makes silicon carbide an interesting alternative to diamond detectors for fast neutron detection.

摘要

宽带隙固态中子探测器的应用正在拓展至需要紧凑尺寸和高辐射硬度的环境中,比如散裂中子源和下一代聚变装置。碳化硅因其高抗辐射性、快速响应时间、稳定性和良好的能量分辨率,是这些领域中用作中子探测器的一种非常有前景的材料。在本文中,使用来自ISIS散裂源的中子对两种不同的碳化硅探测器进行了测量,并在实验室中对其进行了为期一周的α粒子辐照稳定性测量。文中还考虑了探测器外壳对探测器计数率的影响。此外,通过将弗拉斯卡蒂中子发生器的中子测量结果与GEANT4模拟进行比较,描述了探测器对氘 - 氘(D - D)聚变中子的响应。良好的稳定性测量结果和探测器响应函数评估表明,这种探测器可同时用作2 - 4 MeV中子的中子计数器和能谱仪。此外,在中子和α辐照过程中不存在极化效应,这使得碳化硅成为用于快中子探测的金刚石探测器的一个有趣替代方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cdba/7866174/518788935d09/materials-14-00568-g001a.jpg

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