Li Yifan, Zhang Yating, Li Tengteng, Li Mengyao, Chen Zhiliang, Li Qingyan, Zhao Hongliang, Sheng Quan, Shi Wei, Yao Jianquan
Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
Nano Lett. 2020 Aug 12;20(8):5646-5654. doi: 10.1021/acs.nanolett.0c00082. Epub 2020 Jul 9.
Owning to the unique optical and electronic properties, organic-inorganic hybrid perovskites have made impressive progress in photodetection applications. However, achieving ultrabroadband detection over the ultraviolet (UV) to terahertz (THz) range remains a major challenge for perovskite photodetectors. Here, we report an ultrabroadband (UV-THz) dual-mechanism photodetector based on CHNHPbI films. The photoresponse of the PD in the UV-visible (vis) and near-infrared (NIR)-THz bands is mainly caused by the photoconductive (PC) effect and bolometric effect, respectively. High responsivities ranging from 10 to 10 mA W are acquired within UV-THz bands under 1 V bias voltage at room temperature. Moreover, the device also shows fast rise and decay times of 76 and 126 ns under 1064 nm laser illumination, respectively. This work provides insight into the thermoelectric characteristics of perovskite and offers a new way to realize ultrabroadband photodetectors notably for THz detector at room temperature.
由于具有独特的光学和电子特性,有机-无机杂化钙钛矿在光电探测应用中取得了令人瞩目的进展。然而,实现从紫外(UV)到太赫兹(THz)范围的超宽带探测仍然是钙钛矿光电探测器面临的主要挑战。在此,我们报道了一种基于CHNHPbI薄膜的超宽带(UV-THz)双机制光电探测器。该光电探测器在紫外-可见(vis)和近红外(NIR)-THz波段的光响应分别主要由光电导(PC)效应和测热辐射计效应引起。在室温下1 V偏置电压下,在UV-THz波段内获得了10至10 mA W的高响应率。此外,该器件在1064 nm激光照射下的上升和下降时间也分别仅为76和126 ns。这项工作深入了解了钙钛矿的热电特性,并为实现超宽带光电探测器,特别是室温下的太赫兹探测器提供了一种新方法。