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用于应用的二维材料的等离子体增强化学气相沉积

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications.

作者信息

Yi Kongyang, Liu Donghua, Chen Xiaosong, Yang Jun, Wei Dapeng, Liu Yunqi, Wei Dacheng

机构信息

State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.

Institute of Molecular Materials and Devices, Department of Material Science, Fudan University, Shanghai 200433, China.

出版信息

Acc Chem Res. 2021 Feb 16;54(4):1011-1022. doi: 10.1021/acs.accounts.0c00757. Epub 2021 Feb 3.

Abstract

ConspectusSince the rise of two-dimensional (2D) materials, synthetic methods including mechanical exfoliation, solution synthesis, and chemical vapor deposition (CVD) have been developed. Mechanical exfoliation prepares randomly shaped materials with small size. Solution synthesis introduces impurities that degrade the performances. CVD is the most successful one for low-cost scalable preparation. However, when it comes to practical applications, disadvantages such as high operating temperature (∼1000 °C), probable usage of metal catalysts, contamination, defects, and interstices introduced by postgrowth transfer are not negligible. These are the reasons why plasma-enhanced CVD (PECVD), a method that enables catalyst-free in situ preparation at low temperature, is imperatively desirable.In this Account, we summarize our recent progress on controllable preparation of 2D materials by PECVD and their applications. We found that there was a competition between etching and nucleation and deposition in PECVD, making it highly controllable to obtain desired materials. Under different equilibrium states of the competition, various 2D materials with diverse morphologies and properties were prepared including pristine or nitrogen-doped graphene crystals, graphene quantum dots, graphene nanowalls, hexagonal boron nitride (-BN), B-C-N ternary materials (BCN), etc. We also used mild plasma to modify or treat 2D materials (e.g., WSe) for desired properties.PECVD has advantages such as low temperature, transfer-free process, and industrial compatibility, which enable facile, scalable, and low-cost preparation of 2D materials with clean surfaces and interfaces directly on noncatalytic substrates. These merits significantly benefit the as-prepared materials in the applications. Field-effect transistors with high motilities were directly fabricated on graphene and nitrogen-doped graphene. By use of -BN as the dielectric interfacial layer, both mobilities and saturated power densities of the devices were improved owing to the clean, closely contacted interface and enhanced interfacial thermal dissipation. High-quality materials and interfaces also enabled promising applications of these materials in photodetectors, pressure sensors, biochemical sensors, electronic skins, Raman enhancement, etc. To demonstrate the commercial applications, several prototypical devices were studied such as distributed pressure sensor arrays, touching module on a robot hand for braille recognition, and smart gloves for recording sign language. Finally, we discuss opportunities and challenges of PECVD as a comprehensive preparation methodology of 2D materials for future applications beyond traditional CVD.

摘要

综述

自从二维(2D)材料兴起以来,已经开发了包括机械剥离、溶液合成和化学气相沉积(CVD)在内的合成方法。机械剥离制备出尺寸小且形状随机的材料。溶液合成会引入杂质,从而降低材料性能。CVD是用于低成本可扩展制备的最成功方法。然而,在实际应用中,诸如高温操作(约1000°C)、可能使用金属催化剂、污染、缺陷以及生长后转移引入的间隙等缺点不可忽视。这些就是迫切需要等离子体增强化学气相沉积(PECVD)的原因,PECVD是一种能够在低温下进行无催化剂原位制备的方法。

在本综述中,我们总结了我们最近在通过PECVD可控制备二维材料及其应用方面取得的进展。我们发现,在PECVD中蚀刻与成核及沉积之间存在竞争,这使得获得所需材料具有高度可控性。在竞争的不同平衡状态下,制备出了各种具有不同形态和性质的二维材料,包括原始或氮掺杂的石墨烯晶体、石墨烯量子点、石墨烯纳米壁、六方氮化硼(-BN)、B-C-N三元材料(BCN)等。我们还使用温和的等离子体对二维材料(如WSe)进行改性或处理以获得所需性能。

PECVD具有低温、无需转移过程以及工业兼容性等优点,这使得能够在非催化衬底上直接简便、可扩展且低成本地制备具有清洁表面和界面的二维材料。这些优点在应用中极大地有利于所制备的材料。具有高迁移率的场效应晶体管直接在石墨烯和氮掺杂石墨烯上制造。通过使用-BN作为介电界面层,由于清洁、紧密接触的界面和增强的界面热耗散,器件的迁移率和饱和功率密度都得到了提高。高质量的材料和界面也使这些材料在光电探测器、压力传感器、生化传感器、电子皮肤、拉曼增强等方面具有广阔的应用前景。为了展示商业应用,研究了几种原型器件,如分布式压力传感器阵列、用于盲文识别的机器人手上的触摸模块以及用于记录手语的智能手套。最后,我们讨论了PECVD作为二维材料综合制备方法在超越传统CVD的未来应用中的机遇和挑战。

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