Huang Pao-Hsun, Zhang Zhi-Xuan, Hsu Chia-Hsun, Wu Wan-Yu, Huang Chien-Jung, Lien Shui-Yang
School of Information Engineering, Jimei University, Jimei District, Xiamen 361021, China.
School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Materials (Basel). 2021 Feb 2;14(3):690. doi: 10.3390/ma14030690.
In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO) thin films is investigated. The SnO thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (O) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of O ratio, while the plasma powers higher than 1500 W further cause the removal of O and the significant bombardment from Ar*, leading to the increase of resistivity.
在本研究中，研究了自由基强度对氧化锡（SnO）薄膜的沉积机制、光学和电学性质的影响。通过等离子体增强原子层沉积法制备SnO薄膜，采用1000至3000W的不同等离子体功率。实验结果表明，随着功率增加，等离子体中含有不同数量的氩自由基（Ar*）和氧自由基（O*）。通过光发射光谱法证明的Ar和O强度变化表明了三种沉积机制。通过1500W的功率获得了适当的Ar和O强度，导致最高的氧空位（O）比率、最窄的带隙和最致密的薄膜结构。折射率和光学损耗随等离子体功率增加，这可能归因于薄膜密度的增加。根据霍尔效应测量结果，将等离子体功率从1000W提高到1500W会由于O比率的增大而提高载流子浓度，而高于1500W的等离子体功率会进一步导致O的去除以及来自Ar*的显著轰击，从而导致电阻率增加。
