Zhang Xiao-Ying, Yang Yue, Zhang Zhi-Xuan, Geng Xin-Peng, Hsu Chia-Hsun, Wu Wan-Yu, Lien Shui-Yang, Zhu Wen-Zhang
School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China.
Nanomaterials (Basel). 2021 Apr 29;11(5):1173. doi: 10.3390/nano11051173.
In this study, silicon oxide (SiO) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO thin films were investigated. The experimental results demonstrated that the SiO thin film growth per cycle was greatly affected by the O plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO thin films, with different O plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO thin films was also investigated. As the annealing temperature increases, the SiO thin film becomes denser, leading to a higher refractive index and a lower etch rate.
在本研究中，以双（二乙氨基）硅烷（BDEAS）和氧气/氩气混合物作为前驱体，通过远程等离子体原子层沉积法沉积氧化硅（SiO）薄膜。氧等离子体功率对SiO薄膜的质量起着关键作用。在空气中于不同温度下进行1小时的退火处理。研究了1000瓦至3000瓦的氧等离子体功率对SiO薄膜性能的影响。实验结果表明，每个循环中SiO薄膜的生长受到O等离子体功率的极大影响。原子力显微镜（AFM）和导电AFM测试表明，不同O等离子体功率下的SiO薄膜表面相对光滑，且薄膜均具有良好的绝缘性能。在1500瓦功率下沉积的SiO薄膜的水接触角（WCA）高于在其他等离子体功率下沉积的SiO薄膜的其他WCA，表明其亲水性较低。这种现象更可能与较小的键能相关，这与傅里叶变换红外光谱法得到的结果一致。此外，还研究了退火温度对SiO薄膜质量的影响。随着退火温度的升高，SiO薄膜变得更致密，导致折射率更高且蚀刻速率更低。
