Huang Pao-Hsun, Zhang Zhi-Xuan, Hsu Chia-Hsun, Wu Wan-Yu, Ou Sin-Liang, Huang Chien-Jung, Wuu Dong-Sing, Lien Shui-Yang, Zhu Wen-Zhang
School of Ocean Information Engineering, Jimei University, Jimei District, Xiamen 361021, China.
School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Nanomaterials (Basel). 2022 Aug 19;12(16):2859. doi: 10.3390/nano12162859.
The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4. In this study, the functional SnOx films were prepared successfully by plasma-enhanced atomic layer deposition (PEALD) at different substrate temperatures from 100 to 400 °C. The experimental results involving optical, structural, chemical, and electrical properties and morphologies are discussed. The SnO2 and oxygen-deficient Sn3O4 phases coexisting in PEALD SnOx films were found. The PEALD SnOx films are composed of intrinsic oxygen vacancies with O-Sn4+ bonds and then transformed into a crystalline SnO2 phase with increased substrate temperature, revealing a direct 3.5−4.0 eV band gap and 1.9−2.1 refractive index. Lower (<150 °C) and higher (>300 °C) substrate temperatures can cause precursor condensation and desorption, respectively, resulting in reduced film qualities. The proper composition ratio of O to Sn in PEALD SnOx films near an estimated 1.74 suggests the highest mobility of 12.89 cm2 V−1 s−1 at 300 °C.
具有前景的功能性氧化锡（SnOx）因其透明和导电特性而备受关注。SnOx的化学计量组成可描述为常见的n型SnO2和p型Sn3O4。在本研究中，通过等离子体增强原子层沉积（PEALD）在100至400°C的不同衬底温度下成功制备了功能性SnOx薄膜。讨论了涉及光学、结构、化学、电学性质及形貌的实验结果。发现PEALD SnOx薄膜中存在SnO2和缺氧的Sn3O4相共存。PEALD SnOx薄膜由具有O-Sn4+键的本征氧空位组成，然后随着衬底温度升高转变为结晶SnO2相，显示出3.5 - 4.0 eV的直接带隙和1.9 - 2.1的折射率。较低（<150°C）和较高（>300°C）的衬底温度分别会导致前驱体凝聚和解吸，从而降低薄膜质量。PEALD SnOx薄膜中O与Sn的适当组成比接近估计的1.74，表明在300°C时具有12.89 cm2 V−1 s−1的最高迁移率。
