Oriented Perovskite Growth Regulation Enables Sensitive Broadband Detection and Imaging of Polarized Photons Covering 300-1050 nm.

Photodetectors selective to the polarization empower breakthroughs in sensing technology for target identification. However, the realization of polarization-sensitive photodetectors based on intrinsically anisotropic crystal structure or extrinsically anisotropic device pattern requires complicated epitaxy and etching processes, which limit scalable production and application. Here, solution-processed PEA MA (Sn Pb ) I (PEA= phenylethylammonium, MA= methylammonium) polycrystalline film is probed as photoactive layer toward sensing polarized photon from 300 to 1050 nm. The growth of the PEA MA (Sn Pb ) I crystal occurs in confined crystallographic orientation of the (202) facet upon the assistance of NH SCN and NH Cl, enhancing anisotropic photoelectric properties. Therefore, the photodetector achieves a polarization ratio of 0.41 and dichroism ratio (I /I ) of 2.4 at 900 nm. At 520 nm, the I /I even surpasses the one of the perovskite crystalline films, 1.8 and ≈1.2, respectively. It is worth noting that the superior figure-of-merits possess a response width of 900 kHz, I /I ratio of ≈3 × 10 , linear dynamic range from 0.15 nW to 12 mW, noise current of 8.28 × 10 A × Hz , and specific detectivity of 1.53 × 10 Jones, which demonstrate high resolution and high speed for weak signal sensing and imaging. The proof of concept in polarized imaging confirms that the polarization-sensitive photodetector meets the requirements for practical application in target recognition.