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基于具有强层间跃迁的p-Te/n-MoSe范德华异质结的高性能偏振敏感自供电成像光电探测器。

High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe van der Waals heterojunction with strong interlayer transition.

作者信息

Zhao Qixiao, Gao Feng, Chen Hongyu, Gao Wei, Xia Mengjia, Pan Yuan, Shi Hongyan, Su Shichen, Fang Xiaosheng, Li Jingbo

机构信息

Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.

Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China.

出版信息

Mater Horiz. 2021 Nov 1;8(11):3113-3123. doi: 10.1039/d1mh01287h.

DOI:10.1039/d1mh01287h
PMID:34545908
Abstract

In-plane anisotropic two-dimensional (2D) materials offer great opportunities for developing novel polarization sensitive photodetectors without being in conjunction with filters and polarizers. However, owing to low linear dichroism ratio and insufficient optical absorption of the few layer 2D materials, the comprehensive performance of the present polarization sensitive photodetectors based on 2D materials is still lower than the practical application requirements. In this work, after systematic investigation of the structural, vibrational, and optical anisotropies of layer-structured Te nanosheets, a novel polarization-sensitive self-powered imaging photodetector with high comprehensive performance based on a p-Te/n-MoSe van der Waals heterojunction (vdWH) with strong interlayer transition is proposed. Owing to the high rectification ratio (10) of the diode, the device shows excellent photovoltaic characteristics. As examples, the photodetectors exhibited an ultrahigh on/off ratio of 10 at a relatively weak light intensity (4.73 mw cm), and the highest responsivity of the device could reach 2106 mA W without any power supply. In particular, benefitting from the excellent dichroism properties of Te nanosheets synthesized in this work, the anisotropic ratio of the photocurrent (/) could reach as high as 16.39 (405 nm, 24.2 mw cm). This value obtained under zero bias voltage is much greater than that of present 2D material photodetectors even at a bias voltage. In addition, the highest detectivity is 2.91 × 10 Jones at a low bias voltage of -0.08 V. This work provides a novel building block for high resolution polarization-sensitive photodetection of weak signals in complex environments.

摘要

面内各向异性二维(2D)材料为开发无需滤波器和偏振器的新型偏振敏感光电探测器提供了巨大机遇。然而,由于少数层二维材料的线性二向色性比率低且光吸收不足,目前基于二维材料的偏振敏感光电探测器的综合性能仍低于实际应用要求。在这项工作中,通过对层状碲(Te)纳米片的结构、振动和光学各向异性进行系统研究,提出了一种基于具有强层间跃迁的p-Te/n-MoSe范德华异质结(vdWH)的具有高综合性能的新型偏振敏感自供电成像光电探测器。由于二极管的高整流比(10),该器件表现出优异的光伏特性。例如,该光电探测器在相对较弱的光强(4.73 mW cm)下表现出10的超高开/关比,并且在无任何电源的情况下器件的最高响应度可达2106 mA W。特别地,受益于本工作中合成的碲纳米片优异的二向色性特性,光电流(/)的各向异性比率在405 nm、24.2 mW cm时可高达16.39。在零偏置电压下获得的该值甚至比目前二维材料光电探测器在偏置电压下的值还要大得多。此外,在-0.08 V的低偏置电压下最高探测率为2.91×10琼斯。这项工作为在复杂环境中对弱信号进行高分辨率偏振敏感光探测提供了一种新型构建模块。

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