Shu Zhixue, Kong Tai
Department of Physics, University of Arizona, Tucson, AZ 85721, United States of America.
J Phys Condens Matter. 2021 Apr 23;33(19). doi: 10.1088/1361-648X/abe44d.
Low temperature magnetization of CrI, CrSiTeand CrGeTesingle crystals were systematically studied. Based on the temperature dependence of extrapolated spontaneous magnetization from magnetic isotherms measured at different temperatures, the spin stiffness constant () and spin excitation gap (Δ) were extracted according to Bloch's law. For spin stiffness,is estimated to be 27 ± 6 meV Å, 20 ± 3 meV Åand 38 ± 7 meV Åfor CrI, CrSiTeand CrGeTerespectively. Spin excitation gaps determined via Bloch's formulation have larger error bars yielding 0.59 ± 0.34 meV (CrI), 0.37 ± 0.22 meV (CrSiTe) and 0.28 ± 0.19 meV (CrGeTe). Among all three studied compounds, larger spin stiffness value leads to higher ferromagnetic transition temperature.
对CrI、CrSiTe和CrGeTe单晶的低温磁化进行了系统研究。基于在不同温度下测量的磁等温线中外推的自发磁化强度对温度的依赖性,根据布洛赫定律提取了自旋刚度常数()和自旋激发能隙(Δ)。对于自旋刚度,CrI、CrSiTe和CrGeTe的估计值分别为27±6 meV Å、20±3 meV Å和38±7 meV Å。通过布洛赫公式确定的自旋激发能隙具有较大的误差范围,分别为0.59±0.34 meV(CrI)、0.37±0.22 meV(CrSiTe)和0.28±0.19 meV(CrGeTe)。在所有三种研究的化合物中,较大的自旋刚度值导致较高的铁磁转变温度。