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增强的原子有序度导致 AgSbTe 具有优异的热电性能。

Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe.

机构信息

New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.

Theoretical Sciences Unit, JNCASR, Jakkur P.O., Bangalore 560064, India.

出版信息

Science. 2021 Feb 12;371(6530):722-727. doi: 10.1126/science.abb3517.

Abstract

High thermoelectric performance is generally achieved through either electronic structure modulations or phonon scattering enhancements, which often counteract each other. A leap in performance requires innovative strategies that simultaneously optimize electronic and phonon transports. We demonstrate high thermoelectric performance with a near room-temperature figure of merit, ~ 1.5, and a maximum ~ 2.6 at 573 kelvin, by optimizing atomic disorder in cadmium-doped polycrystalline silver antimony telluride (AgSbTe). Cadmium doping in AgSbTe enhances cationic ordering, which simultaneously improves electronic properties by tuning disorder-induced localization of electronic states and reduces lattice thermal conductivity through spontaneous formation of nanoscale (~2 to 4 nanometers) superstructures and coupling of soft vibrations localized within ~1 nanometer around cadmium sites with local strain modulation. The strategy is applicable to most other thermoelectric materials that exhibit inherent atomic disorder.

摘要

通过电子结构调制或声子散射增强来实现高热电性能,这两种方法通常相互抵消。要想提高性能,就需要创新的策略,同时优化电子和声子的输运。通过在镉掺杂多晶银锑碲化物(AgSbTe)中优化原子无序,我们实现了高热电性能,在近室温下的优值约为 1.5,在 573 开尔文时最大可达 2.6。镉掺杂在 AgSbTe 中增强了阳离子有序性,通过调节无序诱导的电子态局域化来同时改善电子性能,并通过自发形成纳米级(2 至 4 纳米)超结构和将局部应变调制与镉位附近1 纳米范围内的局部软振动耦合,降低晶格热导率。该策略适用于大多数表现出固有原子无序的其他热电材料。

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