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电沉积碲化锑薄膜的银含量对热导率和热电性能的影响

Silver content dependent thermal conductivity and thermoelectric properties of electrodeposited antimony telluride thin films.

作者信息

Ferrer-Argemi Laia, Yu Ziqi, Kim Jiwon, Myung Nosang V, Lim Jae-Hong, Lee Jaeho

机构信息

Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, CA, 92697, USA.

Electrochemistry Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon-si, Gyeongnam, 51508, Republic of Korea.

出版信息

Sci Rep. 2019 Jun 25;9(1):9242. doi: 10.1038/s41598-019-45697-9.

Abstract

While electrodeposited antimony telluride thin films with silver contents demonstrated promising thermoelectric properties, their thermal conductivity and the silver content dependence remain unknown. Here, we report the thermal conductivities of AgSbTe and AgSbTe thin films with controlled annealing and temperature conditions and demonstrate the impact of silver content on thermal transport. After annealing at 160 °C, the room-temperature thermal conductivity of AgSbTe and AgSbTe thin films increases from 0.24 to 1.59 Wm K and from 0.17 to 0.56 Wm K, respectively. Using phonon transport models and X-ray diffraction measurements, we attribute the thermal conductivity increases to the crystal growth and explain the thermal conductivity variations with the degree of crystallization. Unlike electrical properties reported in previous studies, the presence of silver contents has little impact on the thermal conductivity of AgSbTe and leads to a strong reduction in the thermal conductivity of AgSbTe thin films. By performing transient thermal conductivity measurements at 94 °C, we find the crystallization activation energy of AgSbTe and AgSbTe films as 1.14 eV and 1.16 eV, respectively. Their differences reveal the role of silver in inhibiting the nucleation and growth of SbTe crystals and impeding thermal transport. These findings provide guidance for optimizing doping and annealing conditions of antimony tellurides for near-room-temperature thermoelectric applications.

摘要

虽然含银的电沉积碲化锑薄膜表现出了良好的热电性能,但其热导率以及与银含量的关系仍不清楚。在此,我们报告了在可控退火和温度条件下AgSbTe和AgSbTe薄膜的热导率,并展示了银含量对热传输的影响。在160°C退火后,AgSbTe和AgSbTe薄膜的室温热导率分别从0.24 Wm⁻¹K增加到1.59 Wm⁻¹K以及从0.17 Wm⁻¹K增加到0.56 Wm⁻¹K。利用声子输运模型和X射线衍射测量,我们将热导率的增加归因于晶体生长,并解释了热导率随结晶程度的变化。与先前研究报道的电学性质不同,银的存在对AgSbTe的热导率影响不大,但会导致AgSbTe薄膜的热导率大幅降低。通过在94°C进行瞬态热导率测量,我们发现AgSbTe和AgSbTe薄膜的结晶活化能分别为1.14 eV和1.16 eV。它们的差异揭示了银在抑制SbTe晶体成核和生长以及阻碍热传输方面的作用。这些发现为优化用于近室温热电应用的碲化锑的掺杂和退火条件提供了指导。

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