界面原子迁移率和电荷转移对CuPd(111)和CuPt(111)上CuO及CuO形成的影响。

Interface atom mobility and charge transfer effects on CuO and CuO formation on CuPd(111) and CuPt(111).

作者信息

Tsuda Yasutaka, Gueriba Jessiel Siaron, Makino Takamasa, Diño Wilson Agerico, Yoshigoe Akitaka, Okada Michio

机构信息

Department of Chemistry, Osaka University, Toyonaka, Osaka, 560-0043, Japan.

Materials Sciences Research Center, Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan.

出版信息

Sci Rep. 2021 Feb 15;11(1):3906. doi: 10.1038/s41598-021-82180-w.

DOI:10.1038/s41598-021-82180-w

PMID:33589680

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7884792/

Abstract

We bombarded [Formula: see text] and [Formula: see text] with a 2.3 eV hyperthermal oxygen molecular beam (HOMB) source, and characterized the corresponding (oxide) surfaces with synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS). At [Formula: see text], CuO forms on both [Formula: see text] and [Formula: see text]. When we increase the surface temperature to [Formula: see text], [Formula: see text] also forms on [Formula: see text], but not on [Formula: see text]. For comparison, [Formula: see text] forms even at [Formula: see text] on Cu(111). On [Formula: see text], [Formula: see text] forms only after [Formula: see text], and no oxides can be found at [Formula: see text]. We ascribe this difference in Cu oxide formation to the mobility of the interfacial species (Cu/Pd/Pt) and charge transfer between the surface Cu oxides and subsurface species (Cu/Pd/Pt).

摘要

我们用能量为2.3电子伏特的超热氧分子束（HOMB）源轰击[化学式：见原文]和[化学式：见原文]，并用同步辐射X射线光电子能谱（SR-XPS）对相应的（氧化物）表面进行表征。在[化学式：见原文]时，[化学式：见原文]和[化学式：见原文]上均形成CuO。当我们将表面温度升高到[化学式：见原文]时，[化学式：见原文]上也会形成[化学式：见原文]，但[化学式：见原文]上不会形成。作为对比，在Cu(111)上，即使在[化学式：见原文]时也会形成[化学式：见原文]。在[化学式：见原文]上，[化学式：见原文]仅在[化学式：见原文]之后形成，在[化学式：见原文]时未发现氧化物。我们将这种氧化铜形成的差异归因于界面物种（Cu/Pd/Pt）的迁移率以及表面氧化铜与次表面物种（Cu/Pd/Pt）之间的电荷转移。