Zeng Fanju, Tan Yongqian, Hu Wei, Tang Xiaosheng, Luo Zhongtao, Huang Qiang, Guo Yuanyang, Zhang Xiaomei, Yin Haifeng, Feng Julin, Zhao Xusheng, Yang Ben
Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
School of Big Data Engineering, Kaili University, Kaili, Guizhou 556011, China.
J Phys Chem Lett. 2021 Feb 25;12(7):1973-1978. doi: 10.1021/acs.jpclett.0c03763. Epub 2021 Feb 17.
Herein, we employed lead-free CsCuI perovskite films as the functional layers to construct Al/CsCuI/ITO memory devices and systematically investigated the impact on the corresponding resistive switching (RS) performance via adding different amounts of hydroiodic acid (HI) in CsCuI precursor solution. The results demonstrated that the crystallinity and morphology of the CsCuI films can be improved and the resistive switching performance can be modulated by adding an appropriate amount of HI. The obtained CsCuI films by adding 5 μL HI exhibit the fewest lattice defects and flattest surface (RMS = 13.3 nm). Besides, the memory device, utilizing the optimized films, has a low electroforming voltage (1.44 V), a large on/off ratio (∼65), and a long retention time (10 s). The RS performance impacted by adding HI, providing a scientific strategy for improving the RS performance of iodine halide perovskite-based memories.
在此，我们采用无铅CsCuI钙钛矿薄膜作为功能层来构建Al/CsCuI/ITO存储器件，并通过在CsCuI前驱体溶液中添加不同量的氢碘酸（HI），系统地研究了其对相应电阻开关（RS）性能的影响。结果表明，通过添加适量的HI，可以改善CsCuI薄膜的结晶度和形貌，并调节电阻开关性能。添加5 μL HI所制备的CsCuI薄膜具有最少的晶格缺陷和最平整的表面（均方根粗糙度 = 13.3 nm）。此外，利用优化后的薄膜制备的存储器件具有低的电形成电压（1.44 V）、大的开/关比（约65）和长的保持时间（10 s）。添加HI对RS性能的影响，为提高基于卤化碘钙钛矿的存储器的RS性能提供了一种科学策略。
