Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Department of Physics , Beihang University , Beijing 100191 , China.
State Key Laboratory of Low-Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter, Department of Physics , Tsinghua University , Beijing 100084 , China.
ACS Appl Mater Interfaces. 2018 Jul 25;10(29):24620-24626. doi: 10.1021/acsami.8b07079. Epub 2018 Jul 11.
All-inorganic CsPbBi I perovskite film was successfully fabricated by incorporating Bi in CsPbI to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPbBi I/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPbBi I/ITO device potential application for multilevel data storage in a nonvolatile memory device.
全无机 CsPbBi I 钙钛矿薄膜通过在 CsPbI 中掺入 Bi 成功制备，以稳定立方晶格。此外，将钙钛矿薄膜应用于制造具有双极电阻开关行为的简单 Ag/CsPbBi I/铟锡氧化物（ITO）存储器件。通过在完全开放空气条件下的保留和耐久性测试，证明了非易失性、可靠性和可重复性的开关特性。该存储器件还呈现出高度均匀和长期稳定的特性。重要的是，通过调节重置停止电压，首次在卤化铅钙钛矿存储器件中观察到多电平高电阻状态。电阻开关行为是由碘离子及其在钙钛矿薄膜中的相应空位的迁移主导的，提出了形成和部分断裂的导电多丝的解释。本研究表明，Ag/CsPbBi I/ITO 器件有望在非易失性存储器件中用于多级数据存储。
