Lei Chao, Chittari Bheema L, Nomura Kentaro, Banerjee Nepal, Jung Jeil, MacDonald Allan H
Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur 741246, West Bengal, India.
Nano Lett. 2021 Mar 10;21(5):1948-1954. doi: 10.1021/acs.nanolett.0c04242. Epub 2021 Feb 18.
We predict that layer antiferromagnetic bilayers formed from van der Waals (vdW) materials with weak interlayer versus intralayer exchange coupling have strong magnetoelectric response that can be detected in dual-gated devices where internal displacement fields and carrier densities can be varied independently. We illustrate this strong temperature-dependent magnetoelectric response in bilayer CrI at charge neutrality by calculating the gate voltage-dependent total magnetization through Monte Carlo simulations and mean-field solutions of the anisotropic Heisenberg model informed from density functional theory and experimental data and present a simple model for electrical control of magnetism by electrostatic doping.
我们预测，由范德华（vdW）材料形成的层状反铁磁双层，其层间交换耦合弱于层内交换耦合，具有很强的磁电响应，这种响应可以在双栅极器件中检测到，在该器件中，内部位移场和载流子密度可以独立变化。我们通过蒙特卡罗模拟计算与栅极电压相关的总磁化强度，并结合密度泛函理论和实验数据得到的各向异性海森堡模型的平均场解，说明了电荷中性的双层CrI中这种强烈的温度依赖性磁电响应，并提出了一种通过静电掺杂实现磁电控制的简单模型。
